Plasma processing apparatus

ABSTRACT

A plasma processing apparatus includes a vacuum processing chamber having a pair of opposing electrodes for plasma generation, one electrode serving as a sample table for a sample including an insulator film. An electrostatic adsorption film is arranged at the sample table electrode to supply a thermal conductive gas between the film and the sample rear surface. A pressure reducing element is also provided. In addition, arrangements are provided to set a gas pressure within said vacuum processing chamber to 0.5 to 4.0 Pa and to apply a high frequency power of 30 MHz to 200 MHz between the electrodes. An electrode cover s disposed at the other electrode, and a clearance between the electrodes is 30 mm to 100 mm. The electrode cover includes fine apertures to introduce a fluorine-containing etching gas, and a power supply accelerates ions in the plasma

BACKGROUND OF THE INVENTION

The present invention relates to a plasma processing apparatus and aplasma processing method, and more particularly relates to a plasmaprocessing apparatus and a plasma processing method suitable for forminga fine pattern in a semiconductor device manufacturing process.

The need for improving the fine pattern manufacturing capability and theprocessing speed in plasma processing is growing further as integrationof semiconductor devices become higher. In order to respond to thisneed, it is required to decrease the pressure of the processing gas andto increase the plasma density.

In regard to plasma processing apparatuses aiming to decrease thepressure of the processing gas and to increase the plasma density, therepresently are: (1) a method which utilizes the electron cyclotronresonance phenomena (hereinafter referred to as ECR) of a microwave(e.g., 2.45 GHz electromagnetic field with a static magnetic field(e.g., 875 G); and (2) a method which utilizes induction couplingprocessing (hereinafter referred to as ICP) in which a plasma isgenerated by generating an induced electromagnetic field by exciting acoil using an RF frequency power source.

In a case where a film of the oxide film group is etched using a gas offluorocarbons, when either of the methods of the ECR described in theabove item (1) or the ICP described in the item (2) is employed, it isdifficult to increase selectivity of an oxide-film to a base material,for example, Si or SiN since dissociation of the gas progressesexcessively.

On the other hand, in a conventional method of generating a plasma byapplying an RF frequency voltage between a pair of parallel flat plates,it is difficult to stably discharge under a pressure condition below 10Pa.

As a countermeasure, there are: (3) a two-frequency exciting method inwhich a plasma is generated using a high frequency voltage above severaltens MHz and bias control of a sample is performed using a low frequencyvoltage below several MHz, which is disclosed in Japanese PatentApplication Laid-Open No. 7-297175 or Japanese Patent ApplicationLaid-Open No. 3-204925; and (4) a magnetron RIE (hereinafter referred toas M-RIE) method which utilizes an action of confining electrons byLorentz force of electrons by applying a magnetic field B in a directionintersection with a self-bias electron field (E) induced on the surfaceof the sample, which is disclosed in Japanese Patent ApplicationLaid-Open No. 2-312231.

Further, a method of increasing plasma density under a low pressurecondition is described in Japanese Patent Application Laid-Open No.56-13480. This method obtains a high plasma density under a low pressurecondition of 0.1 Pa to 1 Pa by utilizing an electron cyclotron resonance(ECR) effect induced by a microwave of electromagnetic waves (e.g., 2.45GHz) and a static magnetic field (e.g., 875 gauss).

On the other hand, in the technical field of performing etchingprocessing or film forming processing of a semiconductor material usinga plasma, an apparatus is employed having a high frequency power sourcefor accelerating ions in a plasma to a sample table for mounting anobject to be processed (for example, a semiconductor wafer substrate,hereinafter referred to as the sample) and an electrostatic attractingfilm for holding the sample on the sample table by an electrostaticattracting force.

For example, in an apparatus disclosed in the specification of U.S. Pat.No. 5,320,982, a plasma is generated by microwaves and a sample is heldon a sample table by an electrostatic force, and using a high frequencypower source output having a sinusoidal waveform as a bias electricsource, the ion energy incident on the sample is controlled byconnecting the power source to the sample table while the temperature ofthe sample is being controlled by introducing a heat transfer gasbetween the sample and the sample table.

Further, Japanese Patent Application Laid-open No. 62 280378 disclosesthat a distribution of the ion energy incident to the sample can benarrowed by applying a pulse-shaped ion control bias voltage to a sampletable for maintaining the electric field intensity between a plasma andan electrode at a constant value. Thereby, it is possible to improve thedimensional accuracy of plasma etching processing and the etching rateratio of a processed film to a base material by several times.

Furthermore, Japanese Patent Application Laid-Open No. 6-61182 disclosesthat it is possible to prevent the occurrence of notches by generating aplasma utilizing electron cyclotron resonance and applying a pulse biashaving a width of pulse duty of 0.1% or more to a sample.

An example of increasing a plasma density by generating cyclotronresonance using an electromagnetic wave of VHF band and a staticmagnetic field is described in the Journal of Applied Physics, Japan,Vol.28, No. 10. However, in this example, by applying a high frequencyvoltage of 144 MHz to a coaxial central conductor and adding a magneticfield of 51 gauss in parallel to the central conductor, cyclotronresonance is formed to generate a high density plasma, and a groundedsample table is arranged in a position downstream of the plasmagenerating portion.

In the plasma generating methods described in Japanese PatentApplication Laid-Open No. 7-288195 or Japanese Patent ApplicationLaid-Open No. 7-297175 among the above-mentioned conventionaltechnologies, a plasma is generated by a high frequency source of 13.56MHz or several tens MHz. It is possible to generate a plasma appropriatefor etching an oxide film under a gas pressure of several tens Pa to 5Pa (Pascal). However, as a pattern dimension becomes as small as nearly0.2 μm or smaller, verticality in a processed shape is strongly requiredand consequently it is inevitable that the gas pressure decreases.

However, in the two-frequency exciting method or the M-RIE methoddescribed above, it is difficult to stably produce a plasma having adesired density higher than nearly 5×10¹⁰ cm⁻³ under a pressurecondition lower than 4 Pa (0.4 to 4 Pa). For example, in thetwo-frequency exciting method described above, even if the plasmaexciting frequency is increased up to a frequency around 50 MHz, theplasma density cannot be increased but, on the contrary, it decreases.Therefore, it is difficult to produce a plasma having a desired densityhigher than nearly 5×10⁻¹⁰ cm⁻³ under a pressure condition of 0.4 to 4Pa.

Further, in the M-RIE method, the density distribution of a plasmagenerated by an action of confining electrons by Lorentz force ofelectrons produced on a surface of a sample must be uniform all over thesurface of the sample. However, there is a disadvantage in that aninclination of the plasma density generally occurs over the surface ofthe sample due to drift of E X B. The inclination of the plasma densityformed by the action of confining electrons cannot be corrected by anymethod such as diffusion or the like since the inclination occurs nearthe sheath in the vicinity of the sample where intensity of the magneticfield is strong.

Japanese Patent Application Laid-Open No. 7-288195 discloses a method ofsolving this problem in which it is possible to obtain a uniform plasmawithout inclination by arranging magnets so that the magnetic fieldintensity is weakened in a direction of electron drift due to the driftof E X B, even when a magnetic field with a maximum value as high as 200gauss is applied in parallel to a sample. However, there is adisadvantage with this method in that it is difficult to follow a changein a processing condition since a condition for maintaining the plasmauniform is limited to a specified narrow range once the distribution ofmagnetic field intensity is fixed. In particular, in a case of a largesized sample having a diameter larger than 300 mm, when a distancebetween the electrodes is as narrow as 20 mm or less, pressure above thecentral portion of the sample becomes 10% or more greater than pressureabove the peripheral portion of the sample. In order to avoid thispressure difference, the gap between the sample table and the oppositeelectrode must be set to 30 mm or more since, otherwise, the difficultyis likely to be increased.

As described above, in the two-frequency exciting method and the M-RIEmethod, it is difficult to obtain a uniform plasma density of 5×10¹⁰cm⁻³ over the surface of a sample having a diameter of 300 mm or moreunder a pressure condition as low as 0.4 to 4 Pa. Therefore, in thetwo-frequency exciting method and the M-RIE method, it is difficult tomanufacture the fine pattern of 0.2 μm or smaller on a wafer having adiameter larger than 300 mm uniformly and quickly with a highselectivity of the etching material to the base material.

On the other hand, a method for substantially increasing a plasmadensity under a low pressure condition is disclosed in Japanese PatentApplication Laid-Open No. 56-13480 among the prior art described above.However, this method has a disadvantage in that in a case where asilicon oxide film or a silicon nitride film is etched using a gascontaining fluorine and carbon, it is difficult to attain a desiredselectivity to the base material such as Si or the like sincedissociation of the gas progresses excessively and a large amount offluorine atoms and/or molecules and/or fluorine ions are generated. TheICP method using an electromagnetic field induced by an RF power sourcealso has a disadvantage in that dissociation of the gas progressesexcessively, the same as in the ECR method described above.

Further, the plasma processing apparatus is generally constructed insuch a manner that the processing gas is exhausted from the peripheralportion of a sample. In such a case, there is a disadvantage in that theplasma density is higher in the central portion of the sample and lowerin the peripheral portion of the sample, and accordingly uniformity inthe processing all over the surface of the sample is degraded. In orderto eliminate this disadvantage, a ring-shaped bank, that is, a focusring is provided near the periphery of the sample to stagnate gas flow.However, there is another disadvantage in that reaction products attachonto the bank which becomes a particle producing source to decrease theproduct yield.

On the other hand, in order to control energy of ions incident to thesample, an RF bias with a sinusoidal waveform is applied to an electrodemounting the sample. The frequency of the RF bias used is severalhundreds kHz to 13.56 MHz. However, the energy distribution of incidentions becomes of a double peak type. One of the two peaks is in a lowerenergy region and the other is in a higher energy region because theions follow to change in electric field inside a sheath when the RF biashas a frequency within this frequency band. The ions in the higherenergy range can process at high speed but damage the sample, and theions in the lower energy range can process without damage but at lowspeed. That is, there is a disadvantage in that the processing speed isdecreased when one tries to prevent damage of the sample, and theproblem of damage arises when one tries to increase the processingspeed.

On the other hand, when the frequency of the RF bias is set to a valuehigher than, for example, 50 MHz, the distribution of incident energybecomes of a single peak type. However, most of the energy is used inplasma generation and consequently the voltage applied to the sheath issubstantially decreased. Therefore, there is a disadvantage in that itis difficult to control the energy of the incident ions independently tothe plasma density.

Further, in the pulse bias power source method described in JapanesePatent Application Laid-Open No. 62-280378 or Japanese PatentApplication Laid-Open No. 6-61182, there is no discussion of a casewhere a dielectric layer for electrostatic attraction is used between asample table electrode and a sample while a pulse bias is applied to thesample. When the pulse bias method is directly applied to theelectrostatic attracting method, an ion acceleration voltage appliedbetween a plasma and the surface of the sample is decreased by theincrease of the voltage generated between both ends of the electrostaticattracting film as ion current flows within one cycle of the RF bias,and consequently the distribution of ion energy is broadened. Therefore,the pulse bias power source method has a disadvantage in that it cannotcope with a required fine pattern processing while temperature of thesample is properly being controlled.

Further, in the conventional sinusoidal wave output bias power sourcemethod disclosed in the specification of U.S. Pat. No. 5,320,982, thereis a disadvantage in that an impedance of the sheath portion approachesan impedance of the plasma itself or lower when the frequency becomeshigh. If this occurs, an unnecessary plasma is generated near the sheathin the vicinity of the sample by the bias power source, and accordinglythe ions are not effectively accelerated and the distribution of theplasma is also degraded to lose controllability of ion energy by thebias power source.

Furthermore, in plasma processing, in order to improve the performance,it is important to properly control the amount of ions, the amount ofradicals and the kinds of radicals. In the past, a gas to be formed intoions and radicals is introduced into a process chamber and the ions andthe radicals are produced at the same time by generating a plasma in theprocess chamber. Therefore, as the processing of the sample becomes verysmall, it becomes clear that there is a limit in the control of theamount of ions, the amount of radicals and the kinds of radicals.

Further, in regard to an example of utilizing cyclotron resonance of theVHF band, installation of a bias electric power source for applying avoltage to a sample table and a means for uniformly applying a voltageall over a sample surface are described in Journal of Applied Physics,Japan, Vol.28, No. 10. Further, a processing chamber has a height higherthan 200 mm. Therefore, the construction cannot use reaction on thesurfaces of opposite electrodes effectively, and consequently it isdifficult to obtain a high selectivity in this construction.

SUMMARY OF THE INVENTION

An object of the present invention is to provide a plasma processingapparatus and a plasma processing method capable of easily performingprecise manufacturing of a fine pattern on a large sized sample having adiameter of 300 mm or more by obtaining a large-sized and uniform plasmain which dissociation of the processing gas does not excessivelyprogress.

Another object of the present invention is to provide a plasmaprocessing apparatus and a plasma processing method capable ofperforming uniform and high-speed processing, and particularly oxidefilm processing, all over the surface of a large diameter sample.

A further object of the present invention is to provide a plasmaprocessing apparatus and a plasma processing method capable of improvingthe selectivity of the etching material of insulator films such as SiO2,SiN, BPSG and the like to the base material.

A still further object of the present invention is to provide a plasmaprocessing apparatus and a plasma processing method capable of improvingthe selectivity of plasma processing stably with low-damage and highcontrollability.

A further object of the present invention is to provide a plasmaprocessing apparatus and a plasma processing method capable ofperforming processing of a required fine pattern manufacturing highlyaccurately and stably by improving temperature control throughelectrostatic attracting of a sample.

A still further object of the present invention is to provide a plasmaprocessing apparatus and a plasma processing method capable ofcontrolling the generation of ions and radicals independently.

The present invention is characterized by a plasma processing apparatuscomprising a vacuum processing chamber, a plasma generating meansincluding a pair of electrodes, a sample table having a sample mountingsurface for mounting a sample to be processed inside the vacuumprocessing chamber, and an evacuating means for evacuating the vacuumprocessing chamber, which further comprises a high frequency electricpower source for applying a high frequency electric power of a VHF bandfrom 30 MHz to 300 MHz between the pair of electrodes; and a magneticfield forming means for forming a static magnetic field or a lowfrequency magnetic field in a direction intersecting an electric fieldgenerated between the pair of electrodes and the surrounding vicinity bythe high frequency electric power source, whereby an electron cyclotronresonance region is formed between the electrodes by the magnetic fieldand the electric field.

The present invention is also characterized by a plasma processingapparatus comprising a vacuum processing chamber, a plasma generatingmeans including a pair of electrodes, a sample table for mounting asample to be processed inside the vacuum processing chamber and alsoserving as one of the electrodes, and an evacuating means for evacuatingthe vacuum processing chamber, which further comprises a high frequencyelectric power source for applying an electric power of a VHF band from50 MHz to 200 MHz between the pair of electrodes; and a magnetic fieldforming means for forming a static magnetic field or a low frequencymagnetic field not weaker than 17 gauss and not stronger than 72 gaussin a direction intersecting an electric field generated between the pairof electrodes and the surrounding vicinity by the high frequencyelectric power source. The magnetic field forming means is set so that aportion where a component of the magnetic field in a direction along thesurface of the sample table becomes maximum is brought to a position onthe opposite side of the sample table from the middle of bothelectrodes. With this arrangement, an electron cyclotron resonanceregion is formed between the electrodes by the magnetic field and theelectric field.

The present invention is further characterized by a method ofplasma-processing a sample using a plasma processing apparatuscomprising a vacuum processing chamber, a plasma generating meansincluding a pair of electrodes, a sample table for mounting a sample tobe processed inside the vacuum processing chamber and also serving asone of said electrodes, and an evacuating means for evacuating thevacuum processing chamber, the method comprising the steps of evacuatinginside the vacuum processing chamber by said evacuating means; forming astatic magnetic field or a low frequency magnetic field not weaker than10 gauss and not stronger than 110 gauss, in a direction intersecting anelectric field between the pair of electrodes by a magnetic fieldforming means; forming an electron cyclotron resonance region betweenboth electrodes by interaction of the magnetic field and an electricfield generated by a high frequency electric power source by applying anelectric power of a VHF band from 30 MHz to 300 MHz between the pair ofelectrodes using the high frequency electric power source; andprocessing the sample by a plasma produced by the cyclotron resonance ofelectrons.

According to the present invention, in order not to excessively progressdissociation of a processing gas and in order to obtain a uniform plasmawhich has a diameter larger than 300 mm and a saturation ion currentdistribution smaller than ±5%, a high frequency electric power sourcehaving a frequency of 30 MHz to 300 MHz, preferably 50 MHz to 200 MHz,is used for generating a plasma. Further, a static magnetic field or alow frequency magnetic field is formed in a direction intersecting anelectric field generated between the pair of electrodes. Thereby, anelectron cyclotron resonance region is formed between the pair ofelectrodes along the surface of the sample table and on the oppositeside of the sample table from the middle of both electrodes by themagnetic field and the electric field. Thus, the sample is processedusing the plasma produced by the cyclotron resonance of electrons.

In regard to the magnetic field, the static magnetic field or the lowfrequency magnetic field (lower than 1 kHz) partially has an intensitynot weaker than 10 gausses and not stronger than 100 gauss, preferablynot weaker than 17 gauss and not stronger than 72 gausses. In regard tothe gas pressure, it is set to a low pressure from 0.4 Pa to 4 Pa. Inaddition to these, the distance between the electrodes is set to a valuefrom 30 mm to 100 mm, preferably, 30 mm to 60 mm.

In regard to the frequency f of the high frequency electric powersource, by employing VHF in the range 50 MHz≦f≦200 MHz the plasmadensity is decreased by one order to two orders compared to that in acase of a microwave ECR. The dissociation of gas is also decreased andaccordingly generation of unnecessary fluorine atoms and/or moleculesand ions are also decreased by one order or more. By using the frequencyin the VHF band and the cyclotron resonance, it is possible to obtain aplasma having an appropriately high density and a high processing rateunder a pressure condition of 0.4 Pa to 4 Pa. Further, since thedissociation of processing gas is not excessively progressed, theselectivity to the base material such as Si, SiN or the like is notsignificantly degraded.

Although the dissociation of processing gas only progresses slightlycompared to that in a conventional apparatus of the parallel flat plateelectrode type using a frequency of 13.56 MHz, the disadvantage of thesmall increase in the amount of fluorine atoms and/or molecules and/orions can be eliminated by providing a material containing silicon orcarbon on the surface of the electrodes and/or a wall surface of thechamber, and further by applying a bias voltage to the electrodes andthe chamber or by exhausting fluorine through coupling the fluorine withhydrogen using a gas containing hydrogen atom.

Further, according to the present invention, a portion where thecomponent of the magnetic field parallel to the sample table between theelectrodes is set at a position on the side opposite to the sample tablefrom the middle of both electrodes and the magnetic field intensity onthe surface of the sample table mounting the sample parallel to thesample table is set below 30 gauss, preferably, below 15 gauss. Thereby,a Lorentz force (E X B) acting on electrons near the sample mountingsurface is made small, and consequently occurrence of non-uniformity bythe electron drift effect due to the Lorentz force on the samplemounting surface can be eliminated.

The present invention is characterized by the fact that the cyclotronresonance effect of electrons is larger in a portion within a range fromthe periphery of a sample to the outer side of the periphery than in thecenter of the sample so as to increase the generation of plasma in theportion within the range from the periphery of the sample to the outerside of the periphery than in the center of the sample. A means fordecreasing the effect of the cyclotron resonance of electrons can beattained by increasing the distance between the cyclotron resonanceregion and the sample, or decreasing the degree of intersection betweenthe magnetic field and the electric field.

When a gradient of the magnetic field near the cyclotron resonanceregion Bc is steepened to narrow the ECR resonance region, the cyclotroneffect can be weakened. The ECR resonance region is formed in a range ofa magnetic field intensity B, Bc(1−a)≦B≦Bc(1+a) where 0.05≦a≦0.1.

A large amount of ions are generated in the ECR resonance region sincedissociation of the processing gas progresses there. On the other hand,a large amount of radicals are generated in the region other than theECR resonance region since the dissociation of-the processing gas doesnot progress significantly compared to progression in the ECR resonanceregion. By adjusting a width of the ECR resonance region and a highfrequency electric power applied to the upper electrode, it is possibleto independently control the amount of generated ions and the amount ofgenerated radicals appropriate for processing the sample.

The present invention is characterized by a plasma processing apparatuscomprising a vacuum processing chamber, a sample table for mounting asample to be processed in the vacuum processing chamber, and a plasmagenerating means including a high frequency electric power source, whichfurther comprises an electrostatic attracting means for holding thesample onto the sample table by an electrostatic attracting force; and apulse bias applying means for applying a pulse bias voltage to thesample; the high frequency electric power source applying a highfrequency voltage of 10 MHz to 500 MHz, the vacuum processing chamberbeing depressurized to 0.5 to 4.0 Pa.

The present invention is further characterized by a plasma processingapparatus comprising a vacuum processing chamber, a sample table formounting a sample to be processed in the vacuum processing chamber, anda plasma generating means including a high frequency electric powersource, which further comprises an electrostatic attracting means forholding said sample onto the sample table by an electrostatic attractingforce; a pulse bias applying means connected to the sample table and forapplying a pulse bias voltage to the sample; and a voltage suppressingmeans for suppressing a voltage rise generated by applying a pulse biasvoltage corresponding to an electrostatic attracting capacity of theelectrostatic attracting means.

The present invention is also characterized by a method of plasmaprocessing comprising the steps of placing a sample on one of a pair ofelectrodes opposite to each other provided in a vacuum processingchamber; holding the sample onto the electrode by an electrostaticattracting force; introducing an etching gas into an environment inwhich the sample is placed; evacuating the environment to a pressurecondition of 0.5 Pa to 4.0 Pa; forming the etching gas into a plasmaunder the pressure condition by applying a high frequency electric powerof 10 MHz to 500 MHz; etching the sample by the plasma; and applying apulse bias voltage to the one of the pair of electrodes.

The present invention is further characterized by a method of plasmaprocessing comprising the steps of placing a sample on one of theelectrodes opposite to each other; holding the placed sample onto theelectrode by an electrostatic attracting force; introducing an etchinggas into an environment in which the sample is placed; forming theintroduced etching gas into a plasma; etching the sample by the plasma;and applying a pulse bias voltage having a pulse width of 250 V to 1000V and a duty ratio of 0.05 to 0.4 to the one of electrodes duringetching, whereby an insulator film, such as SiO₂, SiN, BPSG or the like,in the sample is plasma-processed.

According to another characteristic of the present invention, byapplying a pulse-shaped bias voltage having a proper characteristic to asample table having an electrostatic attracting means with a dielectriclayer for electrostatic attracting, it is possible to appropriatelycontrol the temperature of a sample and stably perform required finepattern processing. That is, the plasma processing apparatus comprisesan electrostatic attracting means for holding a sample onto a sampletable by an electrostatic attracting force, and a pulse bias applyingmeans connected to the sample table for applying a pulse bias voltage tothe sample table. The pulse bias voltage has a period of 0.2 to 2 μs anda duty cycle in the positive direction less than one-half, and isapplied to the sample through a capacitance element.

According to a further characteristic of the present invention, inregard to a voltage suppressing means for suppressing change in avoltage generated by applying the pulse bias voltage corresponding to anelectrostatic attracting capacity of the electrostatic attracting means,the voltage suppressing means is designed so that voltage change due toan electrostatic attracting film of the electrostatic attracting meansduring one cycle of pulse is suppressed to one-half of the pulse biasvoltage. In detail, this can be attained by reducing a thickness of anelectrostatic chuck film made of a dielectric material provided on thesurface of the lower electrode, or by employing a material having alarge specific dielectric coefficient. Further, it is also possible toemploy a method of suppressing an increase of voltage applied to bothends of the dielectric layer by shortening the period of the pulse biasvoltage.

According to a further characteristic of the present invention, byapplying a pulse bias voltage having a pulse width of 250 V to 1000 Vand a duty ratio of 0.05 to 0.4 to the one of electrodes during etching,it is possible to improve the plasma processing selectivity of the basematerial of an insulator film, such as SiO₂, SiN, BPSG or the like.

The present invention is characterized by a plasma processing apparatuscomprising a vacuum processing chamber, a sample table for mounting asample to be processed in the vacuum processing chamber, and a plasmagenerating means, which further comprises an electrostatic attractingmeans for holding the sample onto the sample table by an electrostaticattracting force; a bias applying means for applying a bias voltage tothe sample; a radical supplying means having a means decomposing a gasfor generating radicals in advance and for supplying a required amountof the radicals to the vacuum processing chamber; a means for supplyinga gas for generating ions to the vacuum processing chamber; and a plasmagenerating means for generating a plasma in the vacuum processingchamber, wherein SiO₂ is used as the sample.

The present invention is further characterized by a plasma processingapparatus comprising a vacuum processing chamber, a sample table formounting a sample to be processed in the vacuum processing chamber, anda plasma generating means including a high frequency electric powersource, which further comprises an electrostatic attracting means forholding the sample onto the sample table by an electrostatic attractingforce; a pulse bias applying means for applying a pulse bias voltage tothe sample; a radical generating plasma supplying means for forming agas for generating radicals into a plasma in advance and for supplying arequired amount of the radicals to the vacuum processing chamber; andthe plasma generating means for supplying a gas for generating ions tothe vacuum processing chamber and for generating a plasma in the vacuumprocessing chamber, whereby the high frequency electric power sourceapplying a high frequency voltage of 10 MHz to 500 MHz, the vacuumprocessing chamber can be depressurized to 0.5 to 4.0 Pa.

According to another characteristic of the present invention, bycontrolling the amounts and the qualities of ions and radicalsindependently and applying a pulse bias voltage having an appropriatecharacteristic to a sample table having an electrostatic attractingmeans with a dielectric layer for electrostatic attracting, it ispossible to properly control temperature of a sample and to stablyperform required fine pattern processing.

Further, it is possible to improve the selectivity of plasma processingwith a stable and better control condition by controlling the amountsand the qualities of ions and radicals independently and by obtaining anarrow ion energy distribution.

Furthermore, the amounts and the qualities of ions and radicals areindependently controlled, and a voltage suppressing means, whichsuppresses change in a voltage corresponding to an electrostaticattracting capacity of the electrostatic attracting means generated byapplying the pulse bias voltage, is designed so that voltage change dueto an electrostatic attracting film of the electrostatic attractingmeans during one cycle of pulse is suppressed to one-half of the pulsebias voltage. In detail, this can be attained by reducing a thickness ofan electrostatic chuck film made of a dielectric material provided onthe surface of the lower electrode, or by employing a material having alarge specific dielectric coefficient. Further, it is also possible toemploy a method of suppressing an increase of voltage applied to bothends of the dielectric layer by shortening the period of the pulse biasvoltage.

According to a further characteristic of the present invention, sincethe amounts and the qualities of ions and radicals are independentlycontrolled and a pulse bias voltage having a pulse width of 250 V to1000 V and a duty ratio of 0.05 to 0.4 is applied to the one ofelectrodes during etching, it is possible to improve the plasmaprocessing selectivity of the base material to an insulator film, suchas Sio₂, SiN, BPSG or the like.

Further according to a characteristic of the present invention, theamounts and the qualities of ions and radicals are independentlycontrolled, a high frequency electric power source for generating aplasma of a high frequency voltage of 10 MHz to 500 MHz is used, and gaspressure in the processing chamber is set to a low pressure of 0.5 Pa to4.0 Pa. Thereby, it is possible to obtain a stable plasma. Further, byusing such a high frequency voltage, the plasma is well ionized and thecontrol of selectivity during processing a sample is improved.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a vertical cross-sectional view-showing an embodiment of aplasma etching apparatus of a two-electrode type in accordance with thepresent invention.

FIG. 2 is a graph showing an example of change in plasma density whenthe frequency of a high frequency electric power source for generating aplasma is changed under a condition where a magnetic field for producingcyclotron resonance of electrons is applied.

FIG. 3 is a graph showing energy gains k of electrons obtained from ahigh frequency electric field under conditions with and withoutcyclotron resonance.

FIG. 4 is a graph showing the relationship between intensity of amagnetic field and an ion acceleration voltage V_(DC) induced in asample, as well as the deviation ΔV of an induced voltage in the samplewhen an upper electrode of a magnetron discharge electrode is groundedand a lower electrode is applied with a magnetic field B and a highfrequency electric power.

FIG. 5 is a graph showing a magnetic field characteristic of the plasmaetching apparatus of FIG. 1.

FIG. 6 is a graph explaining an ECR region of the plasma etchingapparatus of FIG. 1.

FIGS. 7(A) and 7(B) are charts showing examples of preferable outputwave-forms used in a pulse bias electric power source in accordance withthe present invention.

FIGS. 8(A) to 8(E) are charts showing electric potential wave-forms on asample surface and probability distribution of ion energy when T₀ isvaried while a pulse duty ratio (T₁/T₀) is being kept constant.

FIG. 9 is a chart showing an electric potential wave-form on a samplesurface and probability distribution of ion energy when T₀ is variedwhile a pulse duty ratio is being kept constant.

FIG. 10 is a graph showing the relationship between the pulse OFF period(T₁-T₀) and maximum voltage V_(CM) during one cycle of a voltage inducedbetween both ends of an electrostatic attracting film.

FIG. 11 is a graph showing the relationship between pulse duty ratio and(V_(DC)/V_(p)).

FIG. 12 is a graph showing energy dependence of the silicon etching rateESi and oxide film etching rate ESiO₂ when chlorine gas of 5 mTorr isformed in a plasma.

FIG. 13 is a graph showing ion energy distributions of the oxide filmetching rate ESiO₂ and silicon etching rates ESi as an example ofetching of a oxide film when CF4 gas of 5 mTorr is formed in a plasma.

FIG. 14 is a vertical cross-sectional view showing another embodiment ofa plasma etching apparatus of a two-electrode type in accordance withthe present invention.

FIG. 15 is a vertical cross-sectional view showing a further embodimentof a plasma etching apparatus of a two-electrode type in accordance withthe present invention.

FIG. 16 is a graph explaining an ECR region of the plasma etchingapparatus of FIG. 15.

FIG. 17 is a graph showing a magnetic field distribution characteristicof the plasma etching apparatus of FIG. 15.

FIG. 18 is a vertical cross-sectional view showing a further embodimentof a plasma etching apparatus in accordance with the present invention.

FIG. 19 is a graph showing a magnetic field distribution characteristicof the plasma etching apparatus of FIG. 18.

FIG. 20 is a vertical cross-sectional view showing a further embodimentof a plasma etching apparatus of a two-electrode type in accordance withthe present invention.

FIG. 21 is a vertical cross-sectional view showing a further embodimentof a plasma etching apparatus of a two-electrode type in accordance withthe present invention.

FIG. 22 is a graph showing a magnetic field distribution characteristicof the plasma etching apparatus of FIG. 21.

FIG. 23 is a cross-sectional side view showing the main portion of afurther embodiment of a plasma etching apparatus of a two-electrode typein accordance with the present invention.

FIG. 24 is a vertical cross-sectional view showing the plasma etchingapparatus of FIG. 23.

FIG. 25 is a view showing another embodiment of a magnetic field formingmeans.

FIG. 26 is a vertical cross-sectional view showing another embodiment ofa plasma etching apparatus of a two-electrode type in accordance withthe present invention.

FIG. 27 is a vertical cross-sectional view showing another embodiment ofa plasma etching apparatus of a two-electrode type in accordance withthe present invention.

FIG. 28 is a vertical cross-sectional view showing another embodiment ofa plasma etching apparatus of a two-electrode type in accordance withthe present invention.

FIG. 29 is a graph showing a magnetic field distribution characteristicof the plasma etching apparatus of FIG. 28.

FIG. 30 is a vertical cross-sectional view showing a further embodimentof a plasma etching apparatus of a two-electrode type in accordance withthe present invention.

FIG. 31 is a vertical cross-sectional view showing an embodiment of aplasma etching apparatus of a two-electrode type which is a modificationof one shown in FIG. 1.

FIG. 32 is a graph showing the relationship between frequency of aplasma generating electric power source and a lowest gas pressurecondition for stable discharge.

FIG. 33 is a graph showing the relationship between frequency of a pulsebias electric power source and cumulative electric power.

FIG. 34 is a vertical cross-sectional view showing an embodiment of aplasma etching apparatus of an induction coupling discharge type and anon-magnetic field type among external energy supplying discharge typesto which the present invention is applied.

FIG. 35 is a vertical cross-section view showing a further embodiment ofa plasma etching apparatus in accordance with the present invention.

FIG. 36 is a vertical cross-sectional front view showing a part of amicrowave processing apparatus to which the present invention isapplied.

FIG. 37 is a vertical cross-sectional view showing a further embodimentof a plasma etching apparatus in accordance with the present invention.

FIG. 38 is a vertical cross-sectional front view showing a furtherembodiment of a plasma processing apparatus in accordance with thepresent invention.

FIG. 39 is a vertical cross-sectional view showing a further embodimentof a plasma etching apparatus of a two-electrode type in accordance withthe present invention which is capable of controlling ions and radicalsindependently.

FIG. 40 is a vertical cross-sectional view showing a further embodimentof a plasma etching apparatus of a two-electrode type in accordance withthe present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the present invention will be described below. FIG. 1shows a first embodiment of a plasma etching apparatus using opposedelectrodes to which the present invention is applied.

Referring to FIG. 1, a processing chamber 10 of a vacuum container has apair of opposed electrodes composed of an upper electrode 12 and a lowerelectrode 15. On the lower electrode 15 a sample 40 is mounted. Thedistance of a gap between the electrodes 12 and 15 is preferably notsmaller than 30 mm in order to suppress a pressure difference on thesample to within 10% when the sample has a large diameter of about 300mm or larger. In order to decrease amounts of fluorine atoms, moleculesand ions, the distance is desired to be not larger than 100 mm,preferably, not larger than 60 mm from the view point of effectivelyusing a reaction product on the surfaces of the upper and the lowerelectrodes. A high frequency electric power source 16 for supplying ahigh frequency energy is connected to the upper electrode 12 through amatching box 162. The reference character 161 indicates a high frequencyelectric power modulating signal source. Between the upper electrode 12and the ground there is connected a filter 165 which becomes a lowimpedance to the frequency component of a bias electric power source 17and becomes a high impedance to the frequency component of the highfrequency electric power source 16. The reference character 13 indicatesan insulator member made of aluminum oxide or the like.

The area of the upper electrode 12 arranged nearly parallel to thesample table is larger than an area of the sample 40 to be processed sothat voltage of the bias electric power source 17 is effectively anduniformly applied to the sheath on the sample table.

An upper electrode cover 30 of a fluorine removing plate made ofsilicon, carbon or SiC is provided on the bottom surface of the upperelectrode 12. Further, a gas introducing chamber 34 is provided having agas diffusion plate 32 for diffusing gas in a desired distribution. Agas necessary for processing operations such as etching the sample issupplied to the processing chamber 10 from a gas supplying unit 36through the gas diffusion plate 32 of the gas introducing chamber 34,and holes 38 are provided in the in the upper electrode 12 and the upperelectrode cover 30. An outer chamber 11 is evacuated by a vacuum pump 18connected to the outer chamber 11 through a valve 14 to adjust pressurein the processing chamber 10 to a process pressure. A dischargeconfining ring 37 is provided in the processing chamber 10 to increaseplasma density and make the reaction inside the processing chamberuniform. The discharge confining ring 37 has gaps for evacuation.

Above the upper electrode 12, there is provided a magnetic field formingmeans 200 which forms a magnetic field intersecting with an electricfield E formed between the electrodes at a right angle and parallel tothe surface of the sample 40. The magnetic field forming means 200 has acore 201, an electromagnetic coil 202 and an insulator member 203. Amaterial for constructing the upper electrode 12 is a non-magneticconductor such as aluminum, an aluminum alloy or the like. A materialfor constructing the processing chamber 10 is a non-magnetic materialsuch as aluminum, an aluminum alloy, aluminum oxide, quartz, Sic or thelike. The core 201 is formed in an axial-rotating symmetrical structurehaving a nearly E-shaped cross section with the cores 201A, 201B so asto form a magnetic field B of which the magnetic fluxes extend from theupper central portion of the processing chamber 10 toward the upperelectrode 12 and then extend along and in parallel to the upperelectrode 12 toward the periphery of the upper electrode. The magneticfield formed between both electrodes by the magnetic field forming means200 has a portion of a static magnetic field or a low frequency magneticfield (lower than 1 kHz) having an intensity of 10 gauss to 110 gauss,preferably, 17 gauss to 72 gauss for producing cyclotron resonance.

It is well-known that the relationship between an intensity B_(c)(gauss) of the magnetic field for producing cyclotron resonance and afrequency f (MHz) of the plasma forming high frequency source can beexpressed as B_(c)=0.357 Xf (MHz).

The two electrodes 12 and 15 in the present structure may have someindent portions or projecting portions depending on, for example, arequirement of a plasma forming characteristic as far as the pair ofopposite electrodes 12 and 15 are substantially in parallel to eachother. In such a two-electrode type, the electric field distributionbetween the two electrodes can be easily made uniform. Accordingly,generation of plasma by cyclotron resonance can be made uniformcomparatively easily by improving the uniformity of the magnetic fieldintersecting with the electric field at a right angle.

The lower electrode 15 mounting and holding the sample 40 has a two-poletype electrostatic chuck 20. That is, the lower electrode 15 is composedof a first lower electrode 15A in the outer side and a second lowerelectrode 15B arranged in the inner side through an insulator member 21,and an electrostatic attracting dielectric layer 22 (hereinafterreferred to as an electrostatic attracting film) is provided on theupper surfaces of the first and the second lower electrodes. A directcurrent source 23 is connected to the first and second lower electrodesthrough coils 24A, 24B for cutting a high frequency component to apply adirect current voltage between both lower electrodes so that the secondlower electrode 15B is charged positively. Thereby, the sample 40 isattracted and held onto the lower electrode 15 by a Coulomb force actingbetween the sample 40 and both lower electrodes through theelectrostatic attracting film 22. A material usable for theelectrostatic attracting film 22 is a dielectric material such asaluminum oxide, titanium oxide containing aluminum oxide or the like. Asthe electric source 23, a direct current source of several hundred voltscan be used.

A pulse bias electric power source 17 for supplying a pulse bias havingan amplitude of 20 V to 1000 V is connected to the lower electrodes 15A,15B through blocking capacitors 19A, 19B for cutting Direct currentcomponents, respectively.

Although the electrostatic chuck of a two-pole type has been describedabove, an electrostatic chuck of another type such as a single-pole typeor an e-pole type (n≧3) may be applicable.

When etching is performed, the sample 40 of an object to be processed ismounted on the lower electrode 15 in the processing chamber 10 andattracted by the electrostatic chuck 20. On the other hand, a gasrequired for etching the sample 40 is supplied to the processing chamber10 from the gas supplying unit 36 through the gas introducing chamber34. The outer chamber 11 is vacuum-pumped by the vacuum pump 18 to beevacuated and depressurized so that pressure of the processing chamberbecomes a processing pressure of the sample, for example, a pressure of0.4 Pa to 4.0 Pa. Then, a high frequency electric power of 30 MHz to 300MHz, preferably 50 MHz to 200 MHz, is output from the high frequencyelectric power source 16 to form the processing gas in the processingchamber 10 into a plasma.

By the high frequency electric power of 30 MHz to 300 MHz and theportion of static magnetic field of 10 gauss to 110 gauss formed by themagnetic field forming means 200, cyclotron resonance of electrons isgenerated between the upper electrode 12 and the lower electrode 15 toform a plasma having a low pressure, 0.4 to 4.0 Pa in this case, and ahigh density.

On the other hand, a pulse bias voltage of 20 V to 1000 V having aperiod of 0.1 μs to 10 μs, preferably 0.2 μs to 5 μs, and a duty in apositive pulse portion of 0.05 to 0.4 is applied to the lower electrode15 from the pulse bias electric power source 17 to etch the sample whilethe electrons and the ions in the plasma are being controlled.

The etching gas is formed in a desired distribution by the gas diffusionplate 32 and then introduced into the processing chamber 10 through theholes 38 bored in the upper electrode 12 and the upper electrode cover30.

Materials which can be used for the upper electrode cover 30, includecarbon, silicon or a material containing carbon or silicon which removesthe components of fluorine and/or oxygen to improve the selectivity tothe resist and/or silicon to the base material.

In order to improve the micro workability of a large diameter sample, itis preferable that a plasma generating high frequency electric powersource 16 having a high frequency is used to attempt to stabilizedischarge in a low pressure region. In the present invention, the plasmagenerating high frequency electric power source 16 is connected to theupper electrode 12 in order to obtain a plasma which is a low pressureof 0.4 Pa to 4.0 Pa and a plasma density of 5×10¹⁰ to 5×10¹¹ cm⁻³, anddissociation of the processing gas is not excessively progressed and hasa uniform and large diameter. On the other hand, an ion energycontrolling bias electric source 17 is connected to the lower electrode15 mounting the sample, and the distance between the electrodes is setbetween 30 mm to 100 mm.

Further, using a VHF voltage of 30 MHz to 300 MHz, preferably 50 MHz to200 MHz, for the plasma generating high frequency electric power source16, and by the interaction with the portion of the static magnetic fieldor the low frequency (lower than 1 kHz) magnetic field having anintensity of 10 gauss to 110 gauss, preferably 17 gauss to 72 gauss,cyclotron resonance of electrons is formed between the upper electrode12 and the lower electrode 15.

FIG. 2 shows an example of the change in plasma density when thefrequency of a high frequency electric power source for generating aplasma is changed under a condition where a magnetic field for producingcyclotron resonance of electrons is applied. The gas used is argon with2 to 10% of C₄F₈ added thereto, and the pressure of the processingchamber is 1 Pa. The plasma density in the figure is shown as anormalized value by letting the density in a case of a microwave ECRwith f=2450 MHz be 1 (one). The dashed line in the figure shows a resultobtained in a case without a magnetic field.

The plasma density is lower by one order to two orders compared to thatin the microwave ECR when the frequency is in the range of 50 MHz≦f≦200MHz. Further, dissociation of the gas is also decreased and generationof unnecessary fluorine atoms, molecules and ions is decreased by oneorder or more. By using the frequency in the VHF band and cyclotronresonance, a plasma having appropriately high density, namely, a plasmadensity above 5×10¹⁰ cm⁻³ in absolute value is obtained, and a high rateprocessing is also possible under a low pressure of 0.4 Pa to 4.0 Pa.Furthermore, since dissociation of the gas is not excessivelyprogressed, the selectivity of an insulator film such as SiO₂ to thebase material such as Si or SiN is not appreciably degraded.

When the frequency is within the range of 50 MHz≦f≦200 MHz, thedissociation of the processing gas is slightly progressed compared tothat in a conventional apparatus of parallel flat plate electrode typeusing a frequency of 13.56 MHz, and the disadvantage of a small increasein the amount of fluorine atoms and/or molecules and/or ions can beeliminated by providing a material containing silicon or carbon to thesurface of the electrodes and wall surface of the chamber, and furtherby applying a bias voltage to the electrodes and the wall surface of thechamber or by exhausting fluorine through coupling the fluorine withhydrogen using a gas containing hydrogen atoms.

When the frequency of the high frequency electric power source is above200 MHz, particularly, above 300 MHz, the plasma density becomes high.However, it is not preferable since the dissociation of the processinggas becomes large and fluorine atoms and/or molecules and ions areextremely increased, and consequently the selectivity to the basematerial is largely degraded.

FIG. 3 shows an energy gains k of electrons obtained from a highfrequency electric field under conditions with and without cyclotronresonance. Letting an energy obtained by an electron during one cycle ofa high frequency source under a condition without the magnetic field bee₀, and an energy obtained by an electron during one cycle of a highfrequency source under a condition applied with a cyclotron resonancemagnetic field B_(c)=27π·(m/e) be e₁, e₀ and e₁ are expressed as thefollowing equations:Ze ₀=(e ² E ²/2m){v/(w ² +v ²) }e ₁=(e ² E ² v/4m){1/(v ²+(w−wc)²)+1/(v ²+(w+wc)²}  (Equation 1)where E is the intensity of the electric field.

Letting the ratio (=e₁/e₀) be k, k is expressed by the followingequation, where m is the mass of an electron, e is the charge of anelectron and f is charged frequency:k=(1/2) (w ² +v ²) {1/(v ²+(w−wc)²)+1/(v ²+(w+2c)²},where v is collision frequency, w is exciting angular frequency, and wcis cyclotron angular frequency.

In general, the value k becomes larger as the gas pressure is lower andthe frequency is higher. FIG. 3 is a result obtained using argon gas inwhich k≧150 when f≧50 MHz under a condition of pressure P=1 Pa, anddissociation of the processing gas is progressed even under a lowpressure compared to in a case without the magnetic field. The cyclotronresonance effect is rapidly decreased under a condition of pressure P=1Pa when the frequency is below nearly 20 MHz. It can be understood fromthe characteristic shown in FIG. 2 that when the frequency is lower than30 MHz, there is little difference in the result from that in a casewithout the magnetic field, and the cyclotron resonance effect is small.

Although the cyclotron resonance effect can be increased by decreasingthe gas pressure, electron temperature of the plasma is increased andthere occurs an opposite effect in that the dissociation of the gas isexcessively progressed when the gas pressure is lower than 1 Pa. Inorder to suppress the excessive dissociation of gas and to increase theplasma density above 5×10¹⁰ cm⁻³, the gas pressure is set to at a valuein the range of 0.4 Pa to 4 Pa, preferably, 1 Pa to 4 Pa.

In order to attain an effective cyclotron resonance effect, it isnecessary to set the value k to several tens or larger. It can beunderstood from FIG. 2 and FIG. 3 that in order to effectively use thecyclotron resonance effect without excessively progressing dissociationof the gas, it is required to set the gas pressure to a value of 0.4 Pato 4 Pa and to use a VHF of 30 MHz to 300 MHz, preferably, 50 MHz to 200MHz for plasma generating high frequency electric power.

FIG. 4 shows the relationship between intensity of a magnetic field andan ion acceleration voltage V_(DC) induced in a sample, deviation ΔV ofan induced voltage in the sample when an upper electrode of a magnetrondischarge electrode is grounded and a lower electrode is applied with amagnetic field B and a high frequency electric power. As the intensityof magnetic field is increased, the ion acceleration voltage V_(DC)becomes small by Lorentz force action on electrons and consequently theplasma density is increased. However, since the intensity of magneticfield B is as large as 200 gauss in the conventional magnetron dischargetype, there is a disadvantage in that uniformity of plasma density inthe surface is degraded and the deviation ΔV of the induced voltagebecomes large to increase damage of the sample.

It can be understood from FIG. 4 that in order to decrease the deviationΔV to 1/5 to 1/10 of that in the conventional magnetron discharge typehaving a magnetic field intensity of 200 gauss, in order to eliminatesample damage the intensity of the magnetic field B is set to a valuebelow 30 gauss near the sample surface, preferably, set to a valuesmaller than 15 gauss.

A cyclotron resonance region is formed between the upper electrode 12and the lower electrode 15 and slightly on the side of the upperelectrode from the middle position of both electrodes. The abscissa inFIG. 5 indicates distance from the sample surface (the lower electrode15) to the upper electrode 12, and the ordinate indicates magneticfield. FIG. 5 shows an example obtained under a condition of an appliedfrequency f₁ of 100 MHz, B_(c) of 37.5 G and a distance between theelectrodes of 50 mm, in which an ECR region is formed in a positionabout 30 mm from the sample surface.

As described above, in the present invention, a portion where thecomponent of magnetic field parallel to the lower electrode 15 (thesample mounting surface) becomes maximum is set on the upper electrodesurface or on the side of the upper electrode from the middle positionbetween the two electrodes. By doing so, the intensity of the magneticfield parallel to the sample on the lower electrode surface is set to avalue smaller than 30 gauss, preferably, smaller than 15 gauss to makethe Lorentz force (EXB) acting on electrons near the lower electrodesurface a small value, and consequently it is possible to eliminate thenon-uniformity in the plane of plasma density due to the electron drifteffect caused by Lorentz force on the lower electrode surface.

According to the magnetic field forming means 200 in the embodiment ofFIG. 1, the ECR region is formed nearly in the same level from the lowerelectrode 15 (the sample mounting surface) except for the centralportion of the sample, as shown in FIG. 6. Therefore, a sample having alarge diameter can be plasma-processed uniformly. However, the ECRregion in the central portion of the sample is formed in a position ofhigher level from the sample mounting surface. Since the distancebetween the ECR region and the sample table is larger than 30 mm, ionsand radicals are diffused and averaged in the gap. Therefore, there isno problem in a general plasma processing operation. However, in orderto perform plasma-processing all over the sample uniformly, it ispreferable that the ECR region is formed in a position of the same levelfrom the sample surface all over the surface-of the sample, or the ECRregion is formed in a position slightly closer to the periphery of thesample table compared to the level of the ECR region in the centralportion. The method of forming such a plasma will be described later.

As described above, in the embodiment of the present invention shown inFIG. 1, since a VHF voltage of 30 MHz to 300 MHz forming the plasmagenerating high frequency electric power source 16 is used anddissociation of the processing gas is progressed by electron cyclotronresonance, it is possible to obtain a stable plasma even when gaspressure inside the processing chamber is as low as 0.4 Pa to 4 Pa.Further, since ion collision in the sheath is reduced, moving directionsof ions during processing the sample 40 are well aligned to improve theverticality in the fine pattern processing.

In regard to the surrounding of the processing chamber 10, since theplasma is confined in the vicinity of the sample 40 by the dischargeconfining ring 37, the plasma density is increased and attaching ofunnecessary deposits to portions outside the discharge confining ring 37is minimized.

A material used for the discharge confining ring 37 is a semiconductormaterial or a conductor material such as carbon, silicon or SiC. Whenthe discharge confining ring 37 is connected to a high frequencyelectric power source to cause sputtering by ions, it is possible todecrease attaching of deposits to the ring 37 and also to removefluorine.

Since fluorine can be removed by providing a suscepctive cover 39 madeof carbon, silicon or a material containing carbon or silicon on theinsulator member 13 near the sample when an insulator film such as SiO₂is plasma-processed using a gas containing fluorine, the selectivity canbe improved. In this case, when the thickness of the insulator member 13in a portion under the susceptive cover 39 is thinned to 0.5 mm to 5 mm,the effect-described above can be promoted by the sputtering effect byions.

Further, an electrostatic attracting circuit is formed through the lowerelectrode 15 (15A, 15B) and the sample 40 interposing the electrostaticattracting film 22 of dielectric material. In this state, the sample 40is held and maintained onto the lower electrode 15 by an electrostaticforce. Along the back side surface of the sample 40 held by theelectrostatic attracting force, a heat transfer gas such as helium,nitrogen, argon or the like is supplied. The heat transfer gas is filledbetween the back side surface of the sample 40 and the lower electrode15, and the heat transfer gas is set to a pressure of several hundredspascals to several thousands pascals. It is considered that theelectrostatic attracting force is nearly zero between the indentedportions existing in gaps and acts only in the projecting portions ofthe lower electrode 15. However, as described later, since it ispossible to set an attracting force large enough to withstanding thepressure of the heat transfer gas by properly setting a voltage of thedirect current electric power source 23, the sample 40 cannot be movedor blown off by the heat transfer gas.

The electrostatic attracting film 22 acts to decrease the bias functionof pulse bias to ions in the plasma. The function exists in aconventional method of biasing using a sinusoidal electric power source,but the problem does not clearly appear. However, the problem becomesclear in the pulse bias method since the characteristic of the pulsebias method of narrow ion energy width is lost.

The present invention is characterized by a voltage suppressing meansthat is provided in order to suppress the increase of the voltagedifference generated between the ends of the electrostatic attractingfilm 22 accompanied by application of the pulse bias to increase thepulse bias effect.

As an example of the voltage suppressing means, it is preferable thatthe voltage change (V_(CM)) in one cycle of the bias voltage generatedbetween the ends of the electrostatic attracting film accompanied byapplication of the pulse bias is lower than one-half of the voltage(V_(p)) of the pulse bias. In detail, there is a method for increasingthe electrostatic capacity of the dielectric member by thinning athickness of the electrostatic attracting film made of a dielectricmaterial provided on the surface of the lower electrode, or by employinga material having a large specific dielectric coefficient.

Further, as another example of the voltage suppressing means, there is amethod of suppressing the increase of the voltage V_(CM) by shorteningthe period of the pulse bias voltage. Furthermore, it is also consideredthat the electrostatic attracting circuit and the pulse bias voltageapplying circuit are separately arranged in different positions, forexample, another different electrode opposite to the electrode mountingand holding the sample, or a third electrode provided separately.

Description will be made in detail below on the relationship between thevoltage change (V_(CM)) in one cycle of the bias voltage generatedbetween the ends of the electrostatic attracting film and the pulse biasvoltage which should be brought by the voltage suppressing means inaccordance with the present invention, referring to FIG. 7 to FIG. 13.

FIGS. 7(A) and 7(B) show an example of a desirable output waveform usedin the pulse bias power source 17 in accordance with the presentinvention. In the figure, pulse amplitude is v_(p), pulse period is T₀,and positive direction pulse width is T₁.

When the wave-form of FIG. 7(A) is applied to a sample though a blockingcapacitor and an electrostatic attracting dielectric layer (hereinafterreferred to as electrostatic attracting film), the voltage wave-form onthe surface of the sample under a steady-state condition where a plasmais generated by another power source becomes as shown in FIG. 7 (B).Referring to the labelling of FIG. 7(B), v_(DC) is direct currentcomponent voltage of the wave-form V_(f) is floating potential of theplasma, and V_(CM) is maximum voltage during one cycle of the voltageproduced between both ends of the electrostatic attracting film.

The portion (1) which is positive voltage to V_(f) in FIG. 7(B) is aportion where only electron current is mainly dragged, the portion whichis negative voltage to V_(f) is a portion where ion current is dragged,and the portion V_(f) is a portion where electrons and ions arebalanced. The voltage V_(f) is generally several volts to several tensof volts.

In the description according to FIG. 7 (A) and thereafter, it is assumedthat the capacitance of the blocking capacitor and the capacitance ofthe insulator member near the sample surface are sufficiently largerthan the capacitance of the electrostatic attracting film (hereinafterreferred to as electrostatic attracting capacitance).

The value V_(CM) is expressed by the following equation:V _(CM)=(q/c)={i _(i) X(T ₀-T ₁)}/{(ε_(r)ε₀ /d)×K}  (Equation 2)

In this equation, q is ion current density (averaged value) enteringinto the sample during the period of (T₀-T₁), i_(i) is ion currentdensity, d is film thickness of the electrostatic attracting film, K iselectrode cover ratio of the electrostatic attracting film (≦1), ε_(r)is the specific dielectric constant of the electrostatic attractingfilm, and ε₀ is dielectric constant of vacuum (constant value).

FIGS. 8(A) to 8(E) and FIG. 9 show electric potential wave-forms on thesample surface and probability distribution of ion energy when T₀ isvaried while a pulse duty ratio (T₁/T₀) is being kept constant. Therein,T₀₁:T₀₂:T₀₃:T₀₄:T₀₅=16:8:4:2:1.

As shown in FIG. 8 (A), when the pulse period T₀ is too large, theelectric potential on the sample surface is largely deformed from arectangular wave-form and becomes a triangular wave-form. Thedistribution of ion energy becomes constant from a low ion energy regionto a high ion energy region, as shown in-FIG. 9, which is notpreferable.

As shown in FIGS. 8 (B) to (E), as the pulse period T₀ is decreased tosmall, the value (V_(CM)/V_(p)) becomes smaller than 1 (one), and theion energy distribution is also narrowed.

In FIGS. 8(A) to 8(E) and FIG. 9, the relationship T₀=T₀₁, T₀₂, T₀₃,T₀₄, T₀₅ corresponds to(V_(CM)/v_(p))=1, 0.63, 0.31, 0.16, 0.08.

Next, FIG. 10 shows the relationship between pulse OFF period (T₁-T₀)and maximum voltage v_(CM) during one cycle of a voltage induced betweenboth ends of the electrostatic attracting film.

The solid bold line (line for reference condition) in FIG. 10 showschange of the value V_(CM) in a plasma having a medium density of ioncurrent density i_(i)=5 mA/cm² when about 50% of the area of theelectrode (K=0.5) is flattened to touch to the back side of the sample40, and is covered with aluminum oxide containing titanium oxide(ε_(r)=10) with a thickness of 0.3 mm.

It can be understood from FIG. 10 that as the pulse OFF period (T₁-T₀)is increased, the voltage v_(CM) induced between both ends of theelectrostatic attracting film is increased proportional to the periodand becomes higher than the pulse voltage v_(p) generally used.

For example, in a plasma etching apparatus, the pulse voltage v_(p) isgenerally limited as follows in connection to occurrence of damage,selectivity to base material and/or a mask, a shape and so on:

For gate etching: 20 volts≦v_(p)≦100 volts

For metal etching: 50 volts≦v_(p)≦200 volts

For oxide film etching: 250 volts≦v_(p)≦1000 volts

When it is tried to satisfy the condition (v_(CM)/v_(P))≦0.5, to bedescribed later, in the reference condition, the limit in the pulse OFFperiod (T₁-T₀) becomes as follows:

For gate etching: (T₁-T₀)≦0.15 μs

For metal etching: (T₁-T₀)≦0.35 μs

For oxide film etching: (T₁-T₀)≦1.2 μs

When T₀ approaches to 0.1 μs, unnecessary plasma is generated and thebias electric source is not effectively used for ion acceleration sincethe impedance of the ion sheath approaches to or becomes lower than theimpedance of the plasma. Thereby, controllability of ion energy by thebias electric power source is degraded. Therefore, it is desired thatthe period T₀ is larger than 0.1 μs, preferably, larger than 0.2 μs.

In a gate etching apparatus in which v_(p) can be suppressed to a lowvalue, it is necessary to employ a material having a specific dielectricconstant as high as 10 to 100 for the electrostatic attracting film, forexample, a dielectric constant ε_(r) of Ta₂O₃ is 25, and to alsodecrease the film thickness, for example, to a thickness of 10 μm to 400μm, preferably, to a thickness of 10 μm to 100 μm, without reducing theinsulating withstanding voltage.

In FIG. 10, there are also shown the values of v_(CM) when electrostaticcapacitance per unit area is increased by 2.5 times, 5 times and 10times. Even if an electrostatic attracting film is improved, it isthought that the electrostatic capacitance c can be increased by severaltimes in the present situation. Assuming v_(CM)≦300 volts, c≦10 c₀, thefollowing relation can be obtained:0.1 μs≦(T ₀-T ₁)≦10 μs.

A portion effective for plasma processing by ion acceleration is theportion (T₀-T₁), and therefore it is preferable that the pulse duty(T₁/T₀) is as small as possible.

FIG. 11 shows (V_(DC)/v_(p)) which means an efficiency of plasmaprocessing taking time average into consideration. It is preferable tomake (T₁/T₀) small and (V_(DC)/v_(p)) large.

Assuming (v_(DC)/v_(p))>0.5 as an efficiency of plasma processing andtaking a condition to be described later (v_(DC)/v_(p))≦0.5, the pulseduty becomes (T₁/T₀)≦approximately 0.4.

The pulse duty (T₁/T₀) is effective for ion energy control when it issmall. However, when it is unnecessarily small, a pulse width T₁,becomes as small as 0.05 μ and consequently the pulse bias containsfrequency components in the range of several tens of MHz. As a result,it becomes difficult to separate from the plasma generating highfrequency component which is to be described later. As shown in FIG. 11,since decrease of (v_(DC)/v_(p)) in the range of 0≦(T₁/T₀)≦0.05 issmall, no problem occurs when (T₁/T₀) is set to a value above 0.05.

As an example of gate etching, FIG. 12 shows an energy dependence of thesilicon etching rate ESi and oxide 20 film etching rate ESiO₂ whenchlorine gas of 10 mTorr is formed in a plasma. The silicon etching rateESi becomes a constant value in a low ion energy region. In a region ofion energy above approximately 10 V, ESi increases as the ion energyincreases. On the other hand, the etching rate ESiO₂ for the oxide filmof the base material is zero when the ion energy is smaller than nearly20 V, and when the ion energy exceeds nearly 20 V, the etching rateESiO₂ increase as the ion energy is increased.

As a result, when the ion energy is below nearly 20 V, there is a regionwhere the selectivity to the base material ESi/ESiO₂ becomes ∞(infinity). When the ion energy is above nearly 20 V, the selectivityESi/ESiO₂ to the base material rapidly decreases as the ion energy isincreased.

As an example of etching of an oxide film (SiO, BPSG, HISO, TEOS or thelike) as a kind of insulator films, FIG. 13 shows ion energydistributions of the oxide film etching rate ESiO₂ and silicon etchingrates ESi when C₄F₈ gas of 1.0 Pa is formed in a plasma.

The oxide film etching rate ESiO₂ becomes negative and deposits areproduced when the ion energy is low. The oxide film etching rate ESiO₂steeply increases at the ion energy of nearly 400 V, and after thatgradually increases. On the other hand, the etching rate ESi for siliconto be used as the base material is switched from negative (etching) topositive (etching) at an ion energy higher than the ion energy whereESiO₂ is switched from negative to positive, and then graduallyincreases.

As the result, the selectivity ESi/ESiO₂ to the base material becomes ∞(infinity) at an ion energy where ESiO₂ is switched from negative topositive, and in the ion energy above the switching point theselectivity ESi/ESiO₂ steeply decreases as the ion energy increases.

When the results of FIG. 12 and FIG. 13 are applied to a practicalprocess, ion energy is set to an appropriate value by adjusting the biaselectric power source with taking the values of ESi, ESiO₂, ESi/ESiO₂,and the magnitude of the value ESi/ESiO₂.

A better characteristic can be obtained by switching the ion energy justbefore and just after etching, that is, etching until exposing a basefilm, with giving a priority to the etching rate just before the etchingand giving a priority to the selectivity just after the etching.

The characteristic shown in FIG. 12 and FIG. 13 is a characteristic fora case where the ion energy distribution is limited in a narrow range.Since an etching rate for a case where the ion energy distributionspreads in a wide range is expressed by the time averaged value, itcannot be set at the optimum value and accordingly the selectivity issubstantially degraded.

According to an experiment, when the value (v_(DC)/v_(p)) was smallerthan about 0.3, a deviation of ion energy was smaller than nearly ±15%,and a high selectivity higher than 30 was attained with thecharacteristic of FIG. 12 and FIG. 13. Further, as far as(v_(DC)/v_(p))≦0.5, the selectivity was improved compared to aconventional sinusoidal wave bias method.

As described above, as the voltage suppressing means for suppressing thevoltage change (V_(CM)) in one cycle of the bias voltage generatedbetween the ends of the electrostatic attracting film, it is preferablethat the voltage change (V_(CM)) is lower than one-half of the voltage(v_(p)) of the pulse bias. In detail, there is a method to decreasing athickness of the electrostatic chuck film 22 made of a dielectricmaterial provided on the surface of the lower electrode 15, or byemploying a material having a large specific dielectric coefficient.Further, there is a method to suppress the voltage change between theends of the electrostatic attracting film by shortening the period ofthe pulse bias voltage to 0.1 μs to 10 μs, preferably, 0.2 μs to 5 μs(corresponding to repeating frequency of 0.2 MHz to 5 MHz) so that thepulse duty (T₁/T₀) is set as 0.05≦(T₁/T₂)≦0.4.

Furthermore, it is possible to make the voltage change (v_(CM)) in onecycle of the bias voltage generated between the ends of theelectrostatic attracting film satisfy the above-described condition(v_(DC)/v_(p))≦0.5.

An embodiment of using the vacuum processing chamber for etching of aninsulator film.(SiO, BPSG, TEOS, HISO or the like) will be describedbelow.

A processing gas 36 used for the etching operation is composed of C₄F₈of 1 to 5%, Ar of 90 to 95% and O₂ of 0 to 5%; or C₄F₈ of 1 to 5%, Ar of70 to 90%, O₂ of 0 to 5% and CO of 10 to 20%. The plasma generating highfrequency electric power source 16 used has a higher frequency, forexample 40 MHz, compared to a conventional one to stabilize dischargeunder a low pressure range of 1 to 3 Pa.

When dissociation of the processing gas progresses to exceed thenecessary amount by using the high frequency of the plasma generatinghigh frequency power source 16, the output of the high frequency powersource 16 is ON-OFF controlled or level modulation controlled using ahigh frequency electric power modulating signal source 161. When thelevel is high, ions are generated more than generation of radicals, andwhen the level is low, radicals are generated more than generation ofions. An ON time (or the high level time for the level modulation) usedis 5 to 50 μs, and an OFF time (or the low level time for the levelmodulation) used is 10 to 200 μs, while a period used is 20 to 250 μs.By doing so, it is possible to avoid unnecessary dissociation and toattain a desired ion-radical ratio.

A modulating period of the plasma generating high frequency power sourceis generally longer than the period of the pulse bias. Therefore, themodulating period of the plasma generating high frequency power sourceis set to a value of an integer times the period of the pulse bias tooptimize the phase between them. By doing so, the selectivity can beimproved.

On the other hand, ion energy is controlled so that ions in the plasmaare accelerated and vertically irradiated onto the sample by applying apulse bias voltage. By using an electric power source having, forexample, a pulse bias period T of 0.65 μs, a pulse width T1 of 0.15 μsand a pulse amplitude v_(p) of 800 V as the pulse bias power source 17,it is possible to perform plasma processing having a bettercharacteristic in which the width of ion energy distribution is ±15% andthe selectivity to the base material is 20 to 50.

Another embodiment of a plasma etching apparatus of two-electrode typein accordance with the present invention will be described below,referring to FIG. 14. Although this embodiment has a similarconstruction as shown by FIG. 1, a different point of this embodimentfrom FIG. 1 is that the lower electrode 15 holding the sample has asingle pole type electrostatic chuck 20. An electrostatic attractingdielectric layer 22 is provided on the upper surface of the lowerelectrode 15; and the positive side of the direct current source 23 isconnected to the lower electrode 15 through a coil 24 for cutting thehigh frequency component. Further, the pulse bias electric power source17 for supplying a positive pulse bias voltage of 20 V to 1000 V is alsoconnected to the lower electrode through a blocking capacitor 19.

Discharge confining rings 37A, 37B are provided in the periphery of theprocessing chamber 10 to increase a plasma density and to minimizeattaching of unnecessary deposits onto the outside portions of thedischarge confining rings 37A, 37B. In the discharge confining rings37A, 37B of FIG. 14, a diameter of the bank portion of the dischargeconfining ring 37A in the lower electrode side is formed smaller than adiameter of the bank portion of the discharge confining ring 37B in theupper electrode side so that distribution of reaction products aroundthe sample is made uniform.

A material used for the discharge confining rings 37A, 37B, at least forthe side facing the processing chamber side, is a semiconductor or aconductor such as carbon, silicon or SiC. Further, a bias electric powersource 17A of 100 kHz to 13.56 MHz for the discharge confining ring isconnected to the ring 37A in the lower electrode side through acapacitor 19A, and the ring 37B in the upper electrode side isconstructed so that a part of the voltage of the high frequency electricpower source 16 is applied to the ring 37B in the upper electrode side.Thereby, attaching of deposits onto the rings 37A, 37B due to thesputtering effect of ions is decreased and the fluorine removing effectis provided.

The reference characters 13A, 13C of FIG. 14 are insulator members madeof aluminum oxide or the like, and the reference character 13B is aninsulator member having a conductor such as SiC, glassy carbon, Si orthe like.

When the conductivity of the rings 37A, 37B is low, conductors made of ametal are embedded inside the rings 37A, 37B and distance between thesurface of the ring and the embedded conductor is made small. Thereby,the high frequency electric power easily radiates from the surfaces ofthe rings 37A, 37B to decrease reduction of the sputter effect.

The upper electrode cover 30 is fixed to the upper electrode 12generally only in the peripheral portion of the cover with bolts 250. Agas is supplied to the upper electrode cover 30 from the gas supply unit36 through the gas introducing chamber 34, the gas diffusion plate 32and the upper electrode 12. The holes provided in the upper electrodecover 30 have a very small diameter of 0.3 to 1 mm to reduce thelikelihood of the occurrence of abnormal discharge in the hole. The gaspressure in the upper portion of the upper electrode cover 30 is afraction of one atmospheric pressure to one-tenth of one atmosphericpressure. For example, a force of nearly 100 kg acts on the upperelectrode cover 30 having a diameter of larger than 300 mm as a whole.Therefore, the upper electrode cover 30 is deformed in a convex shape tothe upper electrode 12 and accordingly a gap is produced having severalhundreds micro-meters near the central portion.

In that case, when the frequency of the high frequency electric powersource 16 is increased up to approximately more than 30 MHz, resistancein the lateral direction of the upper electrode cover 30 cannot beneglected and particularly the plasma density near the central portionis decreased. In order to solve this problem, the upper electrode cover30 is fixed to the upper electrode 12 in portions near the center sideof the upper electrode cover, not the peripheral portion. In theembodiment of FIG. 14, the upper electrode cover is fixed to the upperelectrode 12 in several portions near the central side of the upperelectrode cover 30 using bolts 251 made of a semiconductor such as SiCor carbon or an insulator such as aluminum oxide to make distribution ofthe high frequency field applied from the upper electrode 12 sideuniform.

The method of fixing the upper electrode cover 30 to the upper electrode12 at least near the center of the cover is not limited to using thebolts 251 described above. For example, the upper electrode cover 30 maybe fixed to the upper electrode 12 using a substance having adhesivenessall over the surface or at least near the center of the upper electrodecover.

In FIG. 14, the sample 40 to be processed is mounted on the lowerelectrode 15 and attracted by the electrostatic chuck 20, that is, by aCoulomb force produced between both ends of the electrostatic attractingfilm 22 by positive charge by the direct current electric power source23 and negative charge supplied from the plasma.

The operation of this apparatus is the same as that of the two-electrodetype plasma etching apparatus shown in FIG. 1. When etching isperformed, the sample 40 of an object to be processed is mounted on thelower electrode 15 and attracted by an electrostatic force. While aprocessing gas is being supplied to the processing chamber 10 from thegas supplying unit 36, on the other hand, the processing chamber isevacuated and depressurized by the vacuum pump 18 so that pressure ofthe processing chamber becomes a processing pressure of the sample, thatis, a pressure of 0.5 Pa to 4.0 Pa. Then, the high frequency electricpower source 16 is switched on to apply a high frequency electric powerof 20 MHz to 500 MHz, preferably 30 MHz to 100 MHz, between theelectrodes 12 and 15 to form the processing gas into a plasma. On theother hand, a positive pulse bias voltage of 20 V to 1000 V having aperiod of 0.1 μs to 10 μs, preferably 0.2 μs to 5 μs, and a duty in apositive pulse portion of 0.05 to 0.4 is applied to the lower electrode15 from the pulse bias electric power source 17 to etch the sample whilethe electrons and the ions in the plasma are being controlled.

By applying the pulse bias voltage in such a manner, ions and/orelectrons in the plasma are accelerated and vertically irradiated ontothe sample to perform highly precise shape control or highly preciseselectivity control. The characteristics required for the pulse biaspower source 17 and the electrostatic attracting film 22 are the same asin the embodiment of FIG. 1, and accordingly detailed description willbe omitted here.

A further embodiment according to the present invention will bedescribed below, referring to FIG. 15 to FIG. 17. Although thisembodiment is similar to the plasma etching apparatus of thetwo-electrode type construction shown in FIG. 1, a different point ofthis embodiment from FIG. 1 is in construction of the magnetic fieldforming means 200. The core 201 of the magnetic field forming means 200is eccentrically arranged and driven by a motor 204 so as to be rotatedat a speed of several rotations per minute to several tens of rotationsper minute around an axis corresponding to the center of the sample 40.The core 201 is grounded.

In order to perform plasma-processing all over the surface of the samplehighly accurately, cyclotron resonance effect of electrons is larger inthe peripheral portion or the portion outside of the peripheral portionthan in the center so that generation of plasma becomes large in theperipheral portion or the portion outside of the peripheral portion ofthe sample than in the center of the sample. However, in the embodimentof FIG. 1, there is no ECR region in the central portion of the sampleand the plasma density near the center of the sample sometimes becomestoo low, as shown in FIG. 6.

In the embodiment of FIG. 15, the magnetic field distribution is variedby rotation of the eccentric core 201 of the magnetic field formingmeans 200, and accordingly in the central portion of the sample the ECRregion is formed in a low position from the sample surface at time t=0and t=T₀, and formed in a high position from the sample surface at timet=(½)T₀. Since the core 201 is rotated at a speed of several rotationsper minute to several tens of rotations per minute, the averaged valueof the magnetic field intensity in the middle portion between theelectrodes in the direction parallel to the sample surface becomesnearly the same value by the time averaging due to the rotation, asshown in FIG. 17. That is, the ECR region is formed in nearly the samelevel from the sample surface except for the peripheral portion of thesample.

As shown by dash-and-dot lines in the core 201 portion of FIG. 15, thethickness of the core composing the magnetic circuit in the side nearthe eccentric central core is formed thin and the thickness of the corecomposing the magnetic circuit in the side far from the eccentriccentral core is formed thick. By doing so, uniformity of the magneticfield intensity is further improved.

A still further embodiment in accordance with the present invention willbe described below, referring to FIG. 18 and FIG. 19. Although thisembodiment is similar to the plasma etching apparatus of thetwo-electrode type construction shown in FIG. 15, a different point ofthis embodiment from FIG. 15 is in construction of the magnetic fieldforming means 200. The core 201 of the magnetic field forming means 200has a concave surface edge 201A in a portion corresponding to the centerof the processing chamber and also has another edge 201B in the sideposition of the processing chamber. By operation of the concave surfaceedge 201A, the magnetic flux B has a component in the inclineddirection. As a result, distribution of the magnetic field is varied andthe component of the magnetic field intensity in the direction parallelto the sample surface is formed to be more uniform compared to on thecase of FIG. 1, as shown in FIG. 19.

A further embodiment in accordance with the present invention will bedescribed below, referring to FIG. 20. Although this embodiment issimilar to the plasma etching apparatus of the two-electrode typeconstruction shown in FIG. 15, a different point of this embodiment fromFIG. 15 is in construction of the magnetic field forming means 200. Thecore 201 of the magnetic field forming means 200 is of a fixed type, andforms a magnetic circuit together with a core 205 arranged in a positioncorresponding to the central portion of the processing chamber. The core205 is rotated around an axis passing through the center of the edge201A together with an insulator member 203. By such a construction, thesame as the embodiment of FIG. 15, the averaged position of the ECRregion near the central portion of the sample is formed in nearly thesame level from the sample surface all over the surface of the sample.

A still further embodiment of a two-electrode type plasma etchingapparatus in accordance with the present invention will be describedbelow, referring to FIG. 21 and FIG. 22. In this embodiment, themagnetic field forming means 200 has two pairs of coils 210, 220 in thecircumferential portion of the processing chamber, and a rotatingmagnetic field is formed by successively switching the direction of themagnetic field in each of the pairs of coils as shown by the arrows (1),(2), (3), (4). The position of the center o-o′ of the coils 210, 220 isset at a level in the upper electrode 12 side from the middle levelbetween the electrodes 12 and 15. Thereby, the apparatus is constructedso that the magnetic field intensity on the sample 40 becomes smallerthan 30 gauss, preferably, smaller than 15 gauss.

The distribution of the magnetic field intensity for each portion on thesample surface can be adjusted by appropriately choosing the positionand the diameter of the coils 210, 220 so as to increase plasmageneration in the periphery or the outer side of the periphery of thesample.

A further embodiment of a two-electrode type plasma etching apparatus inaccordance with the present invention will be-described below, referringto FIG. 23 and FIG. 24. In this embodiment, the magnetic field formingmeans 200 has a pair of coils 210′ arranged in an arc-shape in ahorizontal plane along the circumference-of the circular processingchamber. The polarity of the magnetic field is varied with a constantperiod as shown by the arrows (1), (2) in FIG. 23 by controlling currentflowing in the pair of coils 210′.

Since the magnetic flux expands with respect to a vertical plane in thecentral portion of the processing chamber as shown by the dashed linesin FIG. 24, the intensity of the magnetic field in the central portionof the processing chamber is reduced. However, the pair of coils 210′are curved along the processing chamber, and the magnetic flux B isconcentrated in the central portion of the processing chamber.Therefore, the intensity of the magnetic field in the central portion ofthe processing chamber can be increased compared to the embodiment ofFIG. 22. In other words, in the embodiment of FIG. 23, it is possible tosuppress a decrease in the magnetic field in the central portion of theprocessing chamber compared to in the embodiment of FIG. 22, and,accordingly, the uniformity of the magnetic field on the sample mountingsurface of the sample table can be improved.

Further, by varying the polarity of the magnetic field with a certainperiod, drift effect of E X B can be reduced.

In this type, two pair of coils as in the embodiment of FIG. 22 may beemployed as the magnetic field forming means 200.

Further, instead of the arc-shaped coil 210′ the magnetic field formingmeans 200 may employ a convex coil 210′ shown in FIG. 25 which is formedby combining a plurality of straight shaped coil sections arranged alongthe circumference of the circular processing chamber 10. In this case,the magnetic flux B concentrates in the central portion of theprocessing chamber and, accordingly, the same effect as in theembodiment of FIG. 23 can be obtained.

Furthermore, as shown in FIG. 26, the center axis of a pair of coils maybe inclined with respect to a vertical plane so as to approach thesample surface in the central portion of the processing chamber.According to this embodiment, since the magnetic field intensity in thecentral portion of the processing chamber can be increased and themagnetic field intensity in the peripheral portion of the processingchamber can be decreased, the uniformity of the magnetic field on thesample mounting surface of the sample table can be improved. In order tomake the magnetic field intensity uniform, it is preferable that theinclining angle θ of the center axis of the coil is set from 5 degreesto 25 degrees.

Further, as shown in FIG. 27, a pair of coils 210B are arranged near apair of coils 210A. By controlling currents flowing in the two pair ofcoils, the position of the ECR resonance as well as the gradient of themagnetic field near the position of the ECR resonance are varied tochange the width of the ECR resonance region. By optimizing the width ofthe ECR resonance region for each process, it is possible to obtain anion/radical ratio suitable for each process.

It is possible to further improve the uniformity of magnetic fieldintensity distribution and the controllability by properly combining theembodiments of FIG. 23 to FIG. 27 described above, if necessary.

A still further embodiment of a two-electrode type plasma etchingapparatus in accordance with the present invention will be describedbelow, referring to FIG. 28 and FIG. 29. In this embodiment, a part ofthe processing chamber is made of a conductor and grounded. On the otherhand, the magnetic field forming means 200 has coils 230, 240 in theperipheral portion and the upper portion of the processing chamber 10.The direction of the magnetic flux B formed by the coil 230 and thedirection of the magnetic flux B′ formed by the coil 240 cancel eachother in the central portion of the processing chamber 10, and superposeeach other in the peripheral portion and the outer portion of theperipheral portion of the processing chamber 10, as shown by the arrows.As a result, the distribution of the magnetic field intensity at eachposition of the sample surface becomes as shown in FIG. 29. In additionto this, in the portion of the mounting surface for the sample 40, thedirection of the electric field and the direction of the magnetic fieldbetween the upper electrode 12 and the lower electrode 15 are the same.On the other hand, in the portion outside the mounting surface for thesample 40, the component of the magnetic field in the vertical directionintersecting with the component of electric field in the lateraldirection at a right angle is formed in the peripheral portion of theupper electrode 12 and the portion between the upper electrode 12 andthe wall of the processing chamber.

Therefore, according to the embodiment of FIG. 38, the cyclotronresonance effect of electrons in the central portion of the sample canbe decreased and generation of plasma in the peripheral portion and theoutside portion of the peripheral portion of the sample can beincreased.

A further embodiment in accordance with the present invention will bedescribed below, referring to FIG. 30. In the two-electrode type plasmaetching apparatus shown in FIG. 1, there are some cases where sufficiention energy cannot be obtained with the high frequency electric power f,applied from the high frequency electric power source 16 to the upperelectrode 12. In such a case, this embodiment increases the ion energyto 100 V to 200 V by applying a high frequency voltage f₃ having afrequency, for example, below 1 MHz from a low frequency electric powersource 163 to the upper electrode 12 as a bias. Here, the referencecharacters 164, 165 indicate filters.

An embodiment of a two-electrode type plasma etching apparatus ofnon-magnetic field type in accordance with the present invention will bedescribed below, referring to FIG. 31.

As described above, in order to improve micro workability of a sample,it is preferable that a plasma generating high frequency electric powersource 16 has a higher frequency and discharge under a low gas pressureis stabilized. In the embodiment of the present invention, the pressureprocessing a sample in the processing chamber is set to 0.5 to 4.0 Pa.By setting the gas pressure in the processing chamber 10 to a lowpressure below 40 mTorr, probability of ion collision in the sheath isdecreased. Therefore, in processing a sample 40, directivity of ions isincreased and accordingly it becomes possible to perform vertical finepattern. However, in order to attain the same processing rate under apressure below 5 mTorr, the exhausting system and the high frequencyelectric power source become large in size, and dissociation of theprocessing gas occurs excessively due to increase of electrontemperature, as a result; the processing characteristic is likely to bedegraded.

In general, between a frequency of a plasma generating electric powersource for a p,air of electrodes and a minimum gas pressure capable ofstably discharging, there is relationship that the lowest gas pressurefor stable discharge is decreased as the frequency of the electric powersource is increased and the distance between the electrodes isincreased. In order to avoid ill effects such as attaching of depositsonto surrounding walls and onto the discharge confining ring 37 and toeffectively perform a function of removing fluorine or oxygen by theupper electrode cover 30, the susceptive cover 39 and the resist in thesample, it is preferable that the distance between the electrodes is setto a value shorter than 50 mm which corresponds to a distance smallerthan 25 times of mean-free-path at the maximum gas pressure of 40 mTorr.On the other hand, in order to attain stable discharge, the distancebetween the electrode is required to be 2 to 4 times (4 mm to 8 mm) orlarger of the mean-free-path at the maximum gas pressure (40 mTorr).

In the embodiment shown in FIG. 31, since a high frequency electricpower of 20 MHz to 500 MHz, preferably 30 MHz to 200 MHz, is used as theplasma generating high frequency electric power source 16, it ispossible to obtain a stable plasma and to improve micro workability evenif the gas pressure in the processing chamber is set to a low pressureof 0.5 to 4.0 Pa. Further, by using such a high frequency electricpower, dissociation of gas plasma is improved and controllability ofselectivity during processing of a sample is improved.

In the embodiments of the present invention described above, theoccurrence of interference between the output of the pulse bias electricpower source and the output of the plasma generating electric powersource can be considered. Therefore, the countermeasure for this problemwill be described below.

In an ideal rectangular pulse having a pulse width of To, a pulse periodof T₀ and rise/fall speeds of infinity, as shown in FIG. 33, 70% to 80%of the electric power is included in the frequency range of f≦3f₀(f₀=(1/T₁)). However, the wave-form actually applied has rise/fallspeeds of finite values, convergence of electric power is furtherimproved and 90% of electric power can be included in the frequencyrange of f≦3f₀.

In order to uniformly apply a pulse bias having a high frequencycomponent of 3f₀ over the surface of a sample, it is preferable toprovide opposing electrodes parallel to the sample surface and to grounda pulse bias having a frequency component within a range of f≦3f₀ where3f₀ is obtained from Equation 3 as follows:3f ₀=3·(10⁶/0.2)=15 MHz, when T=0.2 μs 3f ₀=30 MHz, when T=0.1 μs  (Equation 3)

In the embodiment shown in FIG. 31, a countermeasure is provided forinterference between the output of the pulse bias electric power sourceand the output of the plasma generating electric power source. That is,in the plasma etching apparatus, the plasma generating high frequencyelectric power source 16 is connected to the upper electrode 12 oppositeto the sample 40. In order to set the upper electrode 12 to the groundlevel of the pulse bias, the frequency f₁ of the plasma generatingelectric power source 16 is set to a value larger than 3f₀ describedabove and the upper electrode 12 and the ground level are connected witha band eliminator 141 of which the impedance is large around f=f₁ andsmall for the other frequencies.

On the other hand, the sample table 15 and the ground level areconnected with a band pass filter 142 of which the impedance is smallaround f=f₁ and large for the other frequencies. By constructing in sucha way, the interference between the output of the pulse bias electricpower source 17 and the output of the plasma generating electric powersource 16 can be suppressed to a level which creates no problem and abetter bias can be applied to the sample 40.

FIG. 34 shows an embodiment of a plasma etching apparatus of theinduction coupling discharge type and the non-magnetic field type amongthe external energy supplying discharge type to which the presentinvention is applied. The reference character 52 indicates a flat coil,and the reference character 54 indicates a high frequency electric powersource for applying a high frequency voltage of 10 MHz to 250 MHz to theflat coil. The plasma etching apparatus of the induction couplingdischarge type can generate a stable plasma with a lower frequency andunder a lower gas pressure compared to the type shown in FIG. 10. On thecontrary, dissociation of gas is apt to be progressed. Therefore,unnecessary dissociation is prevented by modulating the output of thehigh frequency electric power source 1 using the high frequency electricpower source modulating signal source 161, as shown in FIG. 1. Theprocessing chamber 10 of a vacuum vessel comprises a sample table 15which mounts the sample 40 on the electrostatic attracting film 22.

When etching is performed, the sample 40 of an object to be processed ismounted on the lower electrode 15 and attracted by an electrostaticforce. While a processing gas is being supplied to the processingchamber 10 from the gas supplying unit, not shown, on the other hand,the processing chamber is evacuated and depressurized by the vacuum pumpso that pressure of the processing chamber becomes a processing pressureof the sample, that is, a pressure of 0.5 Pa to 4.0 Pa. Then, a highfrequency electric power of 13.56 MHz is applied from the high frequencyelectric power source 54 to the flat coil 52 to form a plasma in theprocessing chamber 10. The sample 40 is etched using the plasma. On theother hand, during etching, a pulse bias voltage having a period of 0.1μs to 10 μs, preferably 0.2 μs to 5 μs is applied to the lower electrode15. The amplitude of the pulse bias voltage used is in a different rangedepending on the kind of the film, as described in the embodiment ofFIG. 1. By applying the pulse bias voltage in such a manner, ions in theplasma are accelerated and vertically irradiated onto the sample toperform highly precise shape control or highly precise selectivitycontrol. Accordingly, it is possible to perform accurate etching even ifa resist mask pattern of the sample is of a submicron pattern.

In a plasma etching apparatus of the induction coupling discharge typeand the non-magnetic field type, a Faraday shield plate 53 having a gap,which is grounded, and a thin shield plate protective insulator plate 54having a thickness of 0.5 mm to 5 mm may be provided on the processingchamber 10 side of the induction high frequency magnetic field outputportion. Since the capacitance component between the coil and the plasmais reduced by providing the Faraday shield plate 53, it is possible toreduce energy of ions impinging on a quartz plate under the coil 52 ofFIG. 34 and the shield plate protective insulator plate 54 to reducedamage of the quartz plate and the insulator plate, and to preventforeign from mixing into the plasma.

Further, since the Faraday shield plate 53 also serves as a groundedelectrode for the pulse bias electric power source 17, it is possible toapply the pulse bias between the sample 40 and the Faraday shield plate53 uniformly. In this case, no filter is required between the upperelectrode and the sample table 15.

FIG. 36 is a vertical cross-sectional front view showing a part of amicrowave processing apparatus to which the present invention isapplied. A pulse bias electric power source 17 and a direct currentsource 13 are connected to a lower electrode 15 also serving as a sampletable 15 mounting a sample 40 on an electrostatic attracting film 22.The reference character 41 indicates a magnetron of a microwaveoscillating source, the reference character 42 indicates a microwaveguide tube, and the reference character 43 indicates a quartz plate forvacuum-sealing a processing chamber 10, noting that these elements areused to supply the microwave to the processing chamber. The referencecharacter 47 indicates a first solenoid coil for supplying a magneticfield, and the reference character 48 indicates a second solenoid coilfor supplying a magnetic field. The reference character 49 indicates aprocess gas supplying system which supplies a process gas for performingprocessing such as etching, film-forming and so on into the processingchamber 10. The processing chamber 10 is evacuated by a vacuum pump, notshown. The characteristics required for the pulse bias electric powersource 17 and the electrostatic chuck 20 are the same as in theembodiment of FIG. 1, and accordingly detailed description will beomitted here.

When etching is performed, the sample 40 of an object to be processed ismounted on the lower electrode 15 and attracted by an electrostaticforce. While a processing gas is being supplied to the processingchamber 10 from the gas supplying unit 49, on the other hand, theprocessing chamber is evacuated to a vacuum by the vacuum pump so thatpressure of the processing chamber becomes a processing pressure of thesample, that is, a pressure of 0.5 Pa to 4.0 Pa. Then, the magnetron 41and the first and the second solenoid coils 47, 48 are switched on, anda microwave generated in the magnetron 41 is guided to the processingchamber through the wave-guide tube 42 to produce a plasma. The sample40 is etched using the plasma. On the other hand, during etching, apulse bias voltage having a period of 0.1 μs to 10 μs, preferably 0.2 μsto 5 μs is applied to the lower electrode 15.

By applying the pulse bias voltage in such a manner, ions in the plasmaare accelerated and vertically irradiated onto the sample to performhigh precision shape control or high precision selectivity control.Thereby, it is possible to perform accurate etching processing even if aresist mask pattern of the sample is of a submicron pattern.

In the plasma etching apparatuses in accordance with the presentinvention depicted in FIG. 1 and the following figures, the directcurrent voltage of the electrostatic attracting circuit and the pulsevoltage of the pulse bias electric power source circuit may be generatedby superposing each other. Thereby, both circuits can be constructed incommon. Further, the electrostatic attracting circuit and the pulse biaselectric power source circuit may be separately provided so that thepulse bias does not adversely affect the electrostatic attraction.

Instead of the electrostatic attracting circuit in the embodiment of theplasma etching apparatus of FIG. 1, another attracting means such as avacuum attracting means may be employed.

The above-mentioned plasma processing apparatuses having theelectrostatic attracting circuit and the pulse bias voltage applyingcircuit in accordance with the present invention can be applied not onlyto an etching processing apparatus but also to a plasma processingapparatus such as a CVD apparatus by changing the etching gas to a CVDgas.

A description will be provided below regarding a further embodiment of aplasma etching apparatus capable of submicron plasma-processing byovercoming conventional disadvantages and by controlling quantity andquality of ions and radicals, referring to FIG. 37 depicting the furtherembodiment in accordance with the present invention.

A first plasma generating portion is provided in a place upstream of avacuum processing chamber where a sample is placed noting that the firstplasma generating portion is different from the vacuum processingchamber. Quasi-stable atoms generated in the first plasma generatingportion are injected into the vacuum processing chamber, and then thequasi-stable atoms are formed into a second plasma in the vacuumprocessing chamber. In addition to the plasma etching apparatus shown inFIG. 1, an ion/radical forming gas supply unit 60 and a plasmagenerating chamber 62 for generating the quasi-stable atoms areprovided. Further, a route for introducing a gas containing thequasi-stable atoms into the vacuum processing chamber and an introducingroute connected to the ion/radical forming gas supply unit are providedin the upper electrode 12.

The characteristics of this embodiment are as follows.

(1) A gas supplied from the quasi-stable atom forming gas supply unit 36is formed into a plasma by being applied with a high frequency electricpower in the quasi-stable atom forming plasma generating chamber 62, anda required amount of quasi-stable atoms are generated in advance to beintroduced into the processing chamber 10. In order to efficientlygenerate the quasi-stable atoms, pressure of the quasi-stable atomforming plasma generating chamber 62 is set to a high pressure ofseveral hundred mTorr to several tens of mTorr.

(2) On the other hand, a gas is introduced into the processing chamberfrom the ion/radical forming gas supply unit 60.

(3) A high frequency voltage having a comparatively small power isoutput from the plasma generating electric power source 16 to form aplasma in the processing chamber 10. Since ions are efficiently formedwith electrons having a low energy lower than nearly 5 eV because ofinjection of the quasi-stable atoms, it is possible to obtain a plasmawhich is in a low electron temperature lower than 6 eV, preferably,lower than 4 eV and which has a very small amount of high energyelectrons above 15 eV. Therefore, the radical forming gas is notexcessively dissociated and accordingly a necessary quantity and anecessary quality of the radicals can be maintained. On the other hand,a quantity of the ions can be controlled by the amount of thequasi-stable atoms generated in the quasi-stable atom forming plasmagenerating chamber 62 and the amount of ion forming gas from theion/radical forming gas supply unit 60.

Since the quantity and the quality of the ions and radicals can becontrolled in such a manner, a better performance can be attained evenin submicron plasma processing. The radical forming gas used is CHF₃,CH₂F₂, or a fluorocarbon gas such as C₄F₄ or CF₄, or adding a gascontaining. C and H such as C₂H₄, CH₄, CH₃OH, if necessary. Thequasi-stable forming gas used is a gas composed of one kind or two kindsof rare gas as a base gas. The ion forming gas used is a gas having thefollowing characteristic which efficiently forms ions.

The gas used as an ion forming gas is one having an ionization levelwhich is lower than an energy level of the quasi-stable atoms, or a gashaving an ionization level which is higher than an energy level of thequasi-stable atoms, noting, however, that the difference is as small as5 eV or less.

It is also possible to use the quasi-stable atom forming gas or theradical forming gas described above instead of the ion forming gas,though the performance is likely to be degraded.

FIG. 38 shows a still further embodiment in accordance with the presentinvention in which a quantity and a quality of ions and radicals arecontrolled. This embodiment is the same as the embodiment of FIG. 37 inits basic idea. In FIG. 37, when the distance between the quasi-stableatom forming plasma chamber 62 and the vacuum processing chamber 10 islarge, decay of the quasi-stable atoms in the passage becomes large.This embodiment is a countermeasure for such a case. The referencecharacter 41 indicates a magnetron of a microwave oscillating source,the reference character 42 indicates a microwave guide tube, thereference character 43 indicates a quartz plate for vacuum-sealing afirst plasma generating chamber 45 and allowing the microwave to passthrough, and the reference character 44 is a quartz plate for diffusinggas. In the first plasma generating chamber 45, a plasma is generated bythe microwave under a gas pressure of several hundred mTorr to severaltens of mTorr to form quasi-stable atoms.

Since the distance between the place generating the quasi-stable atomsand the vacuum processing chamber in the apparatus of FIG. 38 is shortcompared with in the apparatus of FIG. 37, it is possible to inject thequasi-stable atoms with a high density and accordingly an amount of ionsin the vacuum processing chamber 10 can be increased. By maintaining theprocessing chamber 10 at a pressure of 5 to 50 mTorr and using the highfrequency electric power source 16 having a frequency above 20 MHz, ahigh density and low electron temperature plasma having a density oforder of 10¹⁰ to 10¹¹/cm³ and an electron temperature of 5 eV,preferably, 3 eV and dissociation of the ion forming gas is progressedwhile avoiding dissociation of CF₂ which requires a dissociation energyof 8 eV. As a result, on the surface of the sample 40, the followingreaction is mainly progressed with the assistance of incident ionsaccelerated at several hundred volts by the bias electric power source17.SiO₂+2CF₂→SiF₄+2CO↑

Since Si and SiN used as a base material are not etched by CF₂, it ispossible to perform oxide film etching with a high selectivity.

Increases in the amount of fluorine due to partial dissociation of CF₂can be decreased by virtue of the upper electrode cover 30 being made ofsilicon, carbon or SiC.

As described above, by adjusting the radical forming gas and the ionforming gas the ratio of ions and radicals in the processing chamber 10can be independently controlled, and consequently the reaction on thesurface of the sample 40 can be easily controlled.

The plasma processing apparatus having the electrostatic attractingcircuit and the pulse bias voltage applying circuit in accordance withthe present invention can be applied not only to an etching processingapparatus but also to a plasma processing apparatus such as a CVDapparatus by changing the etching gas to a CVD gas.

FIG. 39 shows a further embodiment in accordance with the presentinvention in which a quantity and a quality of ions and radicals areindependently controlled. In FIG. 39, the radical forming gas used isCHF₃, CH₂F₂, or a fluorocarbon gas such as C₄F₄ or CF₄, or adding a gascontaining C and H such as C₂H₄, CH₄, CH₃OH, if necessary. The radicalforming gas is introduced into the radical forming plasma generatingchamber 62 through a valve 70 shown by an arrow A in FIG. 39.

In the radical forming plasma generating chamber 62, a plasma isgenerated by applying an output having a frequency of several MHz toseveral tens of MHz of an RF power source 63 to the coil 65 under apressure of several hundred mTorr to several tens mTorr to producemainly CF₂ radicals. The amounts of CF₃ and F produced at the same timeare reduced by an H component.

Since it is difficult to largely reduce the amounts of CF and Ocomponents in the radical forming plasma generating chamber 62, anunnecessary component removing chamber 65 is provided downstream of theradical forming plasma generating chamber. In the unnecessary componentremoving chamber, an inner wall made of a material containing carbon orsilicon such as carbon, Si, SiC or the like is provided to reduce theunnecessary components or to convert the unnecessary components intoother gasses of less ill effect. A valve 71 is connected to an exit ofthe unnecessary component removing chamber 65 to supply a gas which ismainly composed of CF₂.

Since a large amount of sediment such as deposits is accumulated betweenthe valve 70 and the valve 71, it is necessary to perform cleaning orexchanging that portion in a comparatively short period. Therefore, inorder to easily perform opening-to-atmosphere and exchanging work and toshorten vacuum build-up time at restarting, the portion between thevalve 70 and the valve 71 is connected to an evacuation system 74through a valve 72. The evacuation system 74 may also serve as anevacuation system for the processing chamber 10.

The ion forming gas of a rare gas such as argon gas, xenon gas or thelike indicated by B in the figure is supplied to the processing chamberthrough a valve 73. The passage is connected to the exit of the valve71.

By maintaining the processing chamber 10 at a pressure of 5 to 50 mTorrand using the high frequency electric power source 16 having a modulatedfrequency above 20 MHz, a high density and low electron temperatureplasma is provided having a density on the order of 10¹⁰ to 10¹¹/cm³ andan electron temperature of 5 eV, preferably, 3 eV, and dissociation ofthe ion forming gas is progressed while avoiding dissociation of CF₂which requires a dissociation energy of 8 eV. As a result, on thesurface of the sample 40, the following reaction is mainly progressedwith assistance of incident ions accelerated at several hundred volts bythe bias electric power source 17.SiO₂+2CF₂→SiF₄↑+2CO ↑

Since Si and SiN used as a base material are not etched by CF₂, it ispossible to perform oxide film etching with a high selectivity.

Increases in the amount of fluorine due to partial dissociation of CF₂can be decreased by virtue of the upper electrode cover 30 being made ofsilicon, carbon or SiC.

As described above, by adjusting the radical forming gas A and the ionforming gas B, the ratio of ions and radicals in the processing chamber10 can be independently controlled, and consequently the reaction on thesurface of the sample 40 can be easily controlled. Further, sinceunnecessary deposits are removed by the unnecessary component removingchamber 65 so as to enter the processing chamber 10 to as small a degreeas possible, the amount of deposits in the processing chamber 10 issubstantially reduced and accordingly frequency of cleaning theprocessing chamber 10 by opening to the atmosphere is also substantiallyreduced.

FIG. 40 show. A further embodiment in accordance with the presentinvention in which a quantity and a quality of ions and radicals areindependently controlled. Hexa-fluoro-propylene oxide gas (CF₃CFOCF₂,hereinafter referred to as HFPO) is passed through a heating pipeportion 66 via a valve 70 from the portion indicated by A in the figure,and through an unnecessary component removing chamber 65 and a valve 71,and then mixed with an ion forming gas B to transfer toward theprocessing chamber 10. In the heating pipe portion 66, the HFPO isheated at a temperature of 800° C. to 1000° C. to form CF₂ by thermaldecomposition expressed by the following chemical formula:CF₃CFOCF₂→CF₂+CF₃CFO

Although CF₃CFO is comparatively stable and hardly decomposed, part ofthe CF₃CFO is decomposed to produce O and F. Therefore, the unnecessarycomponent removing chamber 65 is provided downstream of the heating pipeportion 66 to remove the unnecessary components or convert to substanceswhich will have ill effects. Although a part of the CF₃CFOCF₂ flows intothe processing chamber 10, there is no problem since it is notdissociated by the low electron temperature plasma below 5 eV.

Use of the valve 72 and the evacuating system 74 and reaction in theprocessing chamber is the same as described for the case of FIG. 39.

The plasma processing apparatus having the electrostatic attractingcircuit and the pulse bias voltage applying circuit in accordance withthe present invention can be applied not only to an etching processingapparatus but also to a plasma processing apparatus such as a CVDapparatus by changing the etching gas to a CVD gas.

According to the present invention, it is possible to provide a plasmaprocessing apparatus and a plasma processing method capable of easilyperforming precise working of a fine pattern to a large sized samplehaving a diameter of 300 mm or larger, and also capable of improving aselectivity during micro processing. Further, it is possible to providea plasma processing apparatus and a plasma processing method capable ofperforming processing, particularly, oxide film processing all over thesurface of a large sized sample uniformly and rapidly.

According to the present invention, it is possible to provide a plasmaprocessing apparatus and a plasma processing method capable of improvingthe selectivity of plasma processing of insulator films such as SiO₂,SiN, BPSG and the like.

Further, it is possible to provide a plasma processing apparatus and aplasma processing method capable of improving the selectivity of plasmaprocessing by obtaining a narrow ion energy distribution having bettercontrollability.

Furthermore, in a case of using a sample table having an electrostaticattracting dielectric layer, it is possible to provide a plasmaprocessing apparatus and a plasma processing method capable of improvingthe selectivity of plasma processing by obtaining a narrow ion energydistribution having better controllability.

Further, it is possible to provide a plasma processing apparatus and aplasma processing method capable of easily performing precise working ofa fine pattern and improving the selectivity during fine patternprocessing.

Furthermore, it is possible to provide a plasma processing apparatus anda plasma processing method capable of improving the selectivity ofplasma processing of insulator films such as Sio₂, SiN, BPSG and thelike by controlling the quantity and the quality of ions and radicalsindependently.

1. A plasma processing apparatus comprising: a vacuum processing chamberfor processing a sample, including an insulator film, by using plasma;an outer chamber connected with an evacuation means; a gas supplyingunit for introducing into the vacuum processing chamber afluorine-containing processing gas; an upper electrode and a lowerelectrode or generating plasma therebetween and providing the vacuumprocessing chamber; an electrode cover comprised of silicon beingprovided at the outer surface of the upper electrode; and a dischargeconfining means comprised of silicon for surrounding the vacuumprocessing chamber.
 2. The plasma processing apparatus according toclaim 1; the lower electrode having a sample mounting surface; saidapparatus further comprising a susceptive cover comprised of siliconnear the sample mounting surface.
 3. A plasma processing apparatuscomprising: a vacuum processing chamber for processing a sample,including an insulator film, by using plasma; a gas supplying unit forintroducing into the vacuum processing chamber a fluorine-containingprocessing gas; an upper electrode and a lower electrode for providingthe vacuum processing chamber therebetween; a high frequency electricpower source for supplying a high frequency energy for generating plasmabetween the upper electrode and the lower electrode; a bias electricpower source connected to the lower electrode to control energy of ionsin the plasma; an electrode cover comprised of silicon being provided atthe outer surface of the upper electrode; a susceptive cover comprisedof silicon being provided near a sample mounting surface of the lowerelectrode; and a discharge confining means comprised of silicon forsurrounding the vacuum processing chamber; wherein an inner surface ofthe vacuum processing chamber is substantially constituted by surfacesof silicon except for the sample mounting surface.
 4. The plasmaprocessing apparatus according to claim 3, further comprising an outerchamber located outside of the vacuum processing chamber and connectedwith an evacuation means.
 5. The plasma processing apparatus accordingto claim 3, wherein the discharge confining means includes a gap forevacuating the processing gas from the vacuum processing chamber to theouter chamber.
 6. The plasma processing apparatus according to claim 1,wherein the discharge confining means is ring-shaped.
 7. The plasmaprocessing apparatus according to claim 2, wherein the dischargeconfining means is ring-shaped.
 8. The plasma processing apparatusaccording to claim 3, wherein the discharge confining means isring-shaped.
 9. The plasma processing apparatus according to claim 1,wherein the discharge confining means is provided with at least a gapfor evacuating the processing gas from the vacuum processing chamber tothe outer chamber.
 10. The plasma processing apparatus according toclaim 2, wherein the discharge confining means is provided with at leasta gap for evacuating the processing gas from the vacuum processingchamber to the outer chamber.
 11. The plasma processing apparatusaccording to claim 6, wherein the discharge confining means is providedwith at least a gap for evacuating the processing gas from the vacuumprocessing chamber to the outer chamber.